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ON Semiconductor EVBUM2516/D User Manual

150 w high power density adapter using sj si mosfets evolution board

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EVBUM2516/D
150 W High Power Density
Adapter Using SJ Si
MOSFETs Evolution Board
User Manual
Contents
This evaluation board user manual describes the 150 W
High Power Density Adapter and its main parameters like
efficiency, no−load input power consumption, EMI
signature, transient responses, etc. The evaluation board is
dedicated to present ON Semiconductor's high performance
controllers. High Power Density design is enabled when
using these controllers and higher switching frequency.
Higher efficiency can be achieved by using GaN HEMT
devices instead of Silicon Super−junction MOSFETs.
The evaluation board comprising of the PFC boost
converter operated in the critical conduction mode (CrCM)
and LLC power stage. The PFC front stage is driven by
NCP1615, assures unity power factor and low input current
THD. The LLC stage operates @ 260 to 300 kHz @ nominal
load and it's managed by the NCP1399 high performance
current mode LLC controller. Super−junction Si MOSFETs
(like FCMT199N60) can be assembled as primary side
power switches. The CV/CC controller NCP4353A ensures
output voltage regulation.
Above mentioned controllers are placed on the Control
Module. Secondary side utilizes synchronous rectifier (SR)
from NCP4305 or NCP4306 family composed with
NVMFS5C645NL 4mW 60V Power MOSFET. Whole SR
stage is implemented on the daughter card for easier main
power board PCB design. The discrete or integrated LLC
resonant thanks implementations can be used in one board
with few changes thanks to universal design.
Table 1. GENERAL PARAMETERS
Device
Applications
Notebook
NCP1615
Adaptors,
NCP1399
Ac – dc converters
NCP4305
for consumer
NCP4353
electronics
Efficiency
Standby Power
150 mW @ 230
Up to 94.15%
© Semiconductor Components Industries, LLC, 2016
October, 2017 − Rev. 6
Input Voltage
90 – 265 Vac
Operating
Temperature
0 – 50 °C
Vac
EVAL BOARD USER'S MANUAL
This evaluation board manual focuses mainly on short
description of adapter operation principles and connections.
For more detailed information please refer to datasheets of
individual part.
Key Features
Wide Input Voltage Range
High Power Density, High Efficiency
Low No−load Power Consumption
X2 Capacitor Discharge Function
Near Unity Power Factor
Overload Protection, Thermal Protection
Low Mains Operation Protection
Secondary Short Circuit Protected
Regulated Output Under any Conditions
Capability to Implement Off−mode for
Normal Output
Voltage / Current
Output Power
19 Vdc / 8 A
150 W
9 A max limit
Cooling
Topology
PFC CrCM
Passive cooling
LLC + SR
1
www.onsemi.com
V
Ripple
OUT
< 250 mV @ Full load
Board size
116 x 55 x 18 mm
Publication Order Number:
EVBUM2516/D

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Summary of Contents for ON Semiconductor EVBUM2516/D

  • Page 1 For more detailed information please refer to datasheets of signature, transient responses, etc. The evaluation board is individual part. dedicated to present ON Semiconductor’s high performance controllers. High Power Density design is enabled when using these controllers and higher switching frequency.
  • Page 2 EVBUM2516/D Figure 1. 150 W High Power Density Adapter − Schematic Of The Power−Board (1/2) Figure 2. 150 W High Power Density Adapter − Schematic Of The Power−Board (2/2) www.onsemi.com...
  • Page 3 EVBUM2516/D Figure 3. High Power Density Adapter − Schematic Of The Control Module 1/2 www.onsemi.com...
  • Page 4 EVBUM2516/D Figure 4. High Power Density Adapter − Schematic Of The Control Module 2/2 www.onsemi.com...
  • Page 5 EVBUM2516/D Figure 5. 150 W High Power Density Adapter − Schematic Of The Switch Module With Si MOSFETs Figure 6. 150 W High Power Density Adapter − Schematic of Synchronous Rectifier Module www.onsemi.com...
  • Page 6 EVBUM2516/D Figure 7. 150 W High Power Density Adapter − Arrangement Of Modules DETAILED DESCRIPTIONS OF THE EVALUATION for PFC and LLC HVSU. LLC HVSU is joined through BOARD same serial circuit R4, R6 and D6. To avoid influence between controllers, HV pin of both controllers are Adapter modular conceptions −...
  • Page 7 EVBUM2516/D FET devices and additional components which are voltage reaches ~21V, optocoupler U4 pulls up OVP/OTP necessary for correct operation. pin of U2 and activates OVP. Output OVP level and response Power Switch Module is designed for Silicon Power is defined by zener diode D5, resistors R30, R31 and MOFETs in small SMD package so−called the Power88.
  • Page 8 EVBUM2516/D Coupling between primary and secondary is ensured connection between secondary ground GND and input earth by the Y−capacitor CY1, which is connected between terminal (PE). The connection should be made by awg 18 or secondary ground and primary bulk voltage. Similar 0.75 mm...
  • Page 9 EVBUM2516/D Figure 10. Evaluation Board − Top Layer Red, Bottom Layer Blue Figure 11. Evolution Board Photograph − Bottom Side www.onsemi.com...
  • Page 10 EVBUM2516/D Figure 12. Evolution Board Photograph − Top View Figure 13. Control Module − Top Side Components, Top Layer − Red, Bottom Layer − Blue www.onsemi.com...
  • Page 11 EVBUM2516/D Figure 14. Control Module Photograph Figure 15. Power Switch Module, Top Side Components, Top Layer − Red, Bottom Layer − Blue Figure 16. Power Switch Module Photograph www.onsemi.com...
  • Page 12 EVBUM2516/D Figure 17. SR Module, Top Side Components, Top Layer − Red, Bottom Layer − Blue Figure 18. SR Module Photograph www.onsemi.com...
  • Page 13 EVBUM2516/D Figure 19. Resonant Tank Composition And Power Switch Module Selection Procedures www.onsemi.com...
  • Page 14 EVBUM2516/D MEASUREMENTS The measurements show the performance of High Power Density Demo−board. Efficiency vs. Output power Si based solution with Integrated LLC transformer, 90VAC Si based solution with Integrated LLC transformer, 120VAC Si based solution with Integrated LLC transformer, 230VAC Output power [W] Figure 20.
  • Page 15 EVBUM2516/D Conducted Emission Quasi − peak dBmV (Domestic) Limit quasi−peak Si Based Solution, 230VAC@Full−load, optimized 100 000 2MHz 5MHz 9MHz 30MHz 0.1MHz 0.1MHz Frequency [Hz] Figure 21. EMI Signature Comparison @ 230 VAC (Measured MAX Peak) out DC out AC Figure 22.
  • Page 16 EVBUM2516/D Figure 23. Transition Response − I = 8A to 0 A, V = 120 V, PFC_indutor Figure 24. PFC − Input Current Modulation, I = 7 A, V = 120 V, www.onsemi.com...
  • Page 17 EVBUM2516/D PFC_DRV PFC_indutor Figure 25. PFC Operating Waveforms, I = 7 A, V = 120 V, tank Figure 26. LLC − Stage Normal Operation Waveforms, I = 8A (Full−load) www.onsemi.com...
  • Page 18 EVBUM2516/D tank LLC HB Figure 27. LLC Stage SKIP MODE Operation Waveforms, I = 600 mA SD_SR1 SD_SR2 Figure 28. Synchronous Rectifier Operating Waveforms − SKIP MODE I = 100 mA, = 120 V, www.onsemi.com...
  • Page 19 EVBUM2516/D SD_SR2 SD_SR1 Figure 29. Synchronous rectifier operating waveforms, I = 8 A, V = 120 V, Literature High Voltage Active X2 Power Factor Controller: NCP1615:http://www.onsemi.com/pub_link/Collateral/NCP1615−D.PDF High Performance Current Mode Resonant Controller with Integrated High Voltage Drivers: NCP1399: http://www.onsemi.com/pub_link/Collateral/NCP1399−D.PDF Secondary Side Synchronous Rectifier Controllers: NCP43080:http://www.onsemi.com/pub_link/Collateral/NCP43080−D.PDF...
  • Page 20 EVBUM2516/D Table 4. BILL OF MATERIALS POWER BOARD v14 Tol- Pack- Manufacturer Substitution anc- Part Number Allowed Parts Description Value Manufacturer CGA5F4C0G2J C15, C16 MLCC SMD 3.9nF/630V C1206 392J085AA MC1206F105Z C17, C18 MLCC SMD 1uF/35V C1206 MULTICOMP 250CT Electrolytic SY035M0220B...
  • Page 21 EVBUM2516/D Table 4. BILL OF MATERIALS POWER BOARD v14 Tol- Pack- Manufacturer Substitution anc- Part Number Allowed Parts Description Value Manufacturer SOD32 D11, D12 Diode SMD − − − − BAS16HT1 SOD32 D9, D17, D18, Diode SMD − BAS16HT1G Semiconductor...
  • Page 22 EVBUM2516/D Table 4. BILL OF MATERIALS POWER BOARD v14 Tol- Pack- Manufacturer Substitution anc- Part Number Allowed Parts Description Value Manufacturer Resistor − R2010 Various Various Resistor − R1206 Various Various Resistor R3, R4, R5, R6 R1206 Various Various Wurth...
  • Page 23 EVBUM2516/D Table 4. BILL OF MATERIALS CONTROL MODULE V4 Tol- Pack- Manufacturer Substitution anc- Part Number Allowed Parts Description Value Manufacturer MLCC SMD C0603 Various Various C8, C9 MLCC SMD 100nF C0603 Various Various MM3Z4V3T SOD32 Zener Diode − MM3Z4V3T1G...
  • Page 24 EVBUM2516/D Table 4. BILL OF MATERIALS CONTROL MODULE V4 Tol- Pack- Manufacturer Substitution anc- Part Number Allowed Parts Description Value Manufacturer Resistor 100R R0603 Various Various Resistor R0805 Various Various Resistor R0603 Various Various Resistor 750R R0603 Various Various Resistor...
  • Page 25 EVBUM2516/D Table 4. BILL OF MATERIALS SI MOSFETS MODULE V3 Tol- Pack- Manufacturer Substitution Parts Description Value Manufacturer Part Number Allowed anc- BAS16HT1 SOD32 D1, D2, D14 Diode SMD − BAS16HT1G Semiconductor Power FCMT199N6 POWE Fairchild/ ON M2, M4, M5 −...
  • Page 26 ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part.