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TIP32 Series(TIP32/32A/32B/32C)
Medium Power Linear Switching Applications
• Complement to TIP31/31A/31B/31C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage : TIP32
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
I
Collector Current (Pulse)
CP
I
Base Current
B
P
Collector Dissipation (T
C
P
Collector Dissipation (T
C
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
V
(sus)
* Collector-Emitter Sustaining Voltage
CEO
I
Collector Cut-off Current
CEO
I
Collector Cut-off Current
CES
I
Emitter Cut-off Current
EBO
h
* DC Current Gain
FE
V
(sat)
* Collector-Emitter Saturation Voltage
CE
V
(sat)
* Base-Emitter Saturation Voltage
BE
f
Current Gain Bandwidth Product
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International
T
=25°C unless otherwise noted
C
Parameter
: TIP32
: TIP32A
: TIP32B
: TIP32C
: TIP32A
: TIP32B
: TIP32C
=25°C)
C
=25°C)
a
T
=25°C unless otherwise noted
C
Parameter
: TIP32
I
: TIP32A
: TIP32B
: TIP32C
: TIP32/32A
V
: TIP32B/32C
V
: TIP32
V
: TIP32A
V
: TIP32B
V
: TIP32C
V
V
V
V
I
V
V
40
1
1.Base
2.Collector
Value
- 40
- 60
- 80
- 100
- 40
- 60
- 80
-100
- 5
- 3
- 5
- 3
40
2
150
- 65 ~ 150
Test Condition
= - 30mA, I
= 0
C
B
= - 30V, I
= 0
CE
B
= - 60V, I
= 0
CE
B
= - 40V, V
= 0
CE
EB
= - 60V, V
= 0
CE
EB
= - 80V, V
= 0
CE
EB
= - 100V, V
= 0
CE
CE
= - 5V, I
= 0
EB
C
= - 4V, I
= - 1A
CE
C
= - 4V, I
= - 3A
CE
C
= - 3A, I
= - 375mA
C
B
= - 4V, I
= - 3A
CE
C
= - 10V, I
= - 500mA
CE
C
TO-220
3.Emitter
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Min.
Max.
Units
-40
V
-60
V
-80
V
-100
V
- 0.3
mA
- 0.3
mA
µA
- 200
µA
- 200
µA
- 200
µA
- 200
- 1
mA
25
10
50
- 1.2
V
- 1.8
V
3.0
MHz
Rev. A, February 2000
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