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PNP General Purpose Amplifier
• This device is designed as a general purpose amplifier and switch for
applications requiring high voltage.
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings*
Symbol
V
Collector-Emitter Voltage
CEO
V
Collector-Base Voltage
CBO
V
Emitter-Base Voltage
EBO
I
Collector Current
C
T
, T
Operating and Storage Junction Temperature Range
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BV
Collector-Emitter Breakdown Voltage *
CEO
BV
Collector-Base Breakdown Voltage
CBO
BV
Emitter-Base Breakdown Voltage
EBO
I
Collector Cutoff Current
CBO
I
Emitter Cutoff Current
EBO
On Characteristics *
h
DC Current Gain
FE
V
(sat)
Collector-Emitter Saturation Voltage
CE
V
(sat)
Base-Emitter Saturation Voltage
BE
Small Signal Characterics
f
Current Gain Bandwidth Product
T
C
Output Capacitance
ob
N
Noise Figure
F
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2004 Fairchild Semiconductor Corporation
MMBT5401
T
=25°C unless otherwise noted
a
Parameter
- Continuous
T
=25°C unless otherwise noted
a
Test Condition
I
= -1.0mA, I
= 0
C
B
I
= -100µA, I
= 0
C
E
I
= -10µA, I
= 0
E
C
V
= -120V, I
= 0
CB
E
V
= -120V, I
= 0, T
CB
E
V
= -3.0V, I
=0
EB
C
I
= -1.0mA, V
= -5.0V
C
CE
I
= -10mA, V
= -5.0V
C
CE
I
= -50mA, V
= -5.0V
C
CE
I
= -10mA, I
= -1.0mA
C
B
I
= -50mA, I
= -5.0mA
C
B
I
= -10mA, I
= -1.0mA
C
B
I
= -50mA, I
= -5.0mA
C
B
I
= -10mA, V
= -10V,
C
CE
f = 100MHz
V
= -10V, I
= 0, f = 1MHz
CB
E
I
= -250µA, V
= -5.0V, R
C
CE
f = 10Hz to 15.7KHz
33
C
B
SOT-23
Mark: 2L
Value
-150
-160
-5.0
-600
-55 ~ 150
Min.
Max.
-150
-160
-5.0
-50
= 100°C
-50
a
-50
50
60
240
50
-0.2
-0.5
-1.0
-1.0
100
300
6.0
= 1.0KΩ
8.0
S
E
Units
V
V
V
mA
°C
Units
V
V
V
nA
µA
nA
V
V
V
V
MHz
pF
dB
Rev. B1, August 2004
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