Harman Kardon MAS 101 Service Manual page 31

FDP20N50 / FDPF20N50
500V N-Channel MOSFET
Features
• 20A, 500V, R = 0.23Ω @V
DS(on)
• Low gate charge ( typical 45.6 nC)
• Low C ( typical 27 pF)
rss
• Fast s witching
• 100% avalanche tested
• Improved dv/dt capability
G
D S
Absolute Maximum Ratings
Symbol
V Drain-Source Voltage
DSS
I Drain Current
D
I Drain Current
DM
V Gate-Source voltage
GSS
E Single Pulsed Avalanche Energy
AS
I Avalanche Current
AR
E Repetitive Avalanche Energy
AR
dv/dt Peak Diode Recovery dv/dt
P Power Dissipation
D
T T Operating and Storage Temperature Range
J, STG
T Maximum Lead Temperature for Soldering Purpose,
L
1/8" from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R Thermal Resistance, Junction-to-Case
θJC
R Thermal Resistance, Case-to-Sink Typ.
θCS
R Thermal Resistance, Junction-to-Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP20N50 / FDPF20N50 Rev. B
= 10 V
GS
TO-220
G D
FDP Series
Parameter
- Continuous (T = 25°C)
C
- Continuous (T = 100°C)
C
- Pulsed
(T = 25°C)
C
- Derate above 25°C
Parameter
Description
These N- Channel enhancement mode
transistors are p roduced using Fairchild' s pr oprietary, pla nar
stripe, DMOS technology.
This advanced techn ology has been especially
minimize on-st ate resistance, pr ovide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
S
FDPF Series
FDP20N50
20
12.9
80
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
250
2.0
-55 to +150
FDP20N50
0.5
0.5
62.5
29
February 2007
UniFET
power field ef
tailored to
D
G
S
FDPF20N50 Unit
500 V
20 * A
12.9 * A
80 * A
±30 V
1110 mJ
20 A
25 mJ
4.5 V/ns
62 W
0.5 W/°C
°C
300 °C
FDPF20N50 Unit
2.0 °C/W
-- °C/W
62.5 °C/W
www.fairchildsemi.com
TM
fect