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Philips Semiconductors
UHF amplifier module
CHARACTERISTICS
T
= 25 C; V
= 5 V; V
mb
S1
SYMBOL
PARAMETER
f
frequency
I
supply current
S1
I
supply current
S2
P
load power
L
G
power gain
p
G
in band gain variation
p
G
- G
gain expansion
p1
p2
efficiency
H
second harmonic
2
H
third harmonic
3
VSWR
input VSWR
in
stability
reverse intermodulation
B
AM bandwidth
ruggedness
2000 Oct 17
= 26 V; P
= 16 W; Z
S2
L
P
< 60 dBm
D
P
< 20 mW
D
f = 1805 to 1880 MHz; P
f = 1930 to 1990 MHz; P
G
at P
p1
G
at P
p2
P
= 16 W
L
P
= 16 W
L
P
= 16 W
L
VSWR
P
16 W; V
L
P
carrier
f
= f
i
c
corner frequency = 3 dB;
P
carrier
VSWR
= Z
= 50
unless otherwise specified.
S
L
CONDITIONS
= 5 W
L
= 5 W
L
= 160 mW;
L
= 5 mW
L
2 : 1 through all phases;
= 25 to 27 V
S2
= 16 W; P
= 40 dBc;
reverse
200 kHz
= 16 W; modulation = 20%
5 : 1 through all phases
3
Product specification
BGY2016
MIN.
TYP.
MAX.
1805
1990
80
430
16
28
35
2
2
1
30
35
40
2 : 1
60
53
2
no degradation
UNIT
MHz
mA
mA
W
dB
dB
dB
dB
%
dBc
dBc
dBc
dBc
MHz
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