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Panasonic UP0KG8DG Specification Sheet page 4

Multi chip discrete silicon epitaxial planar type (sbd) silicon pnp epitaxial planar type (tr)

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UP0KG8DG
Characteristics charts of Tr
UP0KG8D_ I
I
 V
C
−160
T
= 25°C
a
−120
−80
−40
0
0
−4
Collector-emitter voltage V
UP0KG8D_C
C
 V
ob
10
1
0
−10
−20
Collector-base voltage V
4
This product complies with the RoHS Directive (EU 2002/95/EC).
- V
C
CE
CE
−10
I
/I
C
I
= −1.0 mA
B
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
−1
− 0.5 mA
− 0.4 mA
− 0.3 mA
−10
−1
− 0.2 mA
− 0.1 mA
−10
−2
−10
−1
−8
−12
(V)
CE
-V
ob
CB
CB
−10
f = 1 MHz
T
= 25°C
a
−1
−10
−1
−10
−2
−30
−40
0
(V)
CB
UP0KG8D_ V
- I
CE(sat)
C
V
 I
CE(sat)
C
= 10
B
T
= 85°C
a
−25°C
25°C
−1
−10
−10
2
Collector current I
(mA)
C
UP0KG8D_ I
- V
O
IN
I
 V
O
IN
V
= −5 V
O
T
= 25°C
a
−1
−2
Input voltage V
(V)
IN
SJJ00402AED
UP0KG8D_ h
-I
FE
C
h
 I
FE
C
300
V
= −10 V
CE
T
= 85°C
a
25°C
200
−25°C
100
0
−10
−1
−1
−10
−10
2
Collector current I
(mA)
C
UP0KG8D_ V
- I
IN
O
V
 I
IN
O
−10
V
= − 0.2 V
O
T
= 25°C
a
−1
−10
−2
−10
−1
−1
−10
Output current I
(mA)
O
−10
3
−10
2

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