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Panasonic MA4S111 Specification Sheet page 2

Switching diodes silicon epitaxial planar type

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MA4S111
 V
I
F
F
3
10
2
10
= 150° C
T
a
100° C
25° C
10
−20° C
1
−1
10
−2
10
0
0.2
0.4
0.6
0.8
Forward voltage V
 T
I
R
a
5
10
= 75 V
V
R
4
10
3
10
2
10
10
1
−40
0
40
80
120
Ambient temperature T
2
This product complies with the RoHS Directive (EU 2002/95/EC).
5
10
4
10
3
10
2
10
10
1
0
20
1.0
1.2
( V )
F
1.2
1.0
35 V
6 V
0.8
0.6
0.4
0.2
0
160
200
0
20
( ° C)
a
 V
I
R
R
= 150° C
T
a
100° C
25° C
40
60
80
100
120
Reverse voltage V
( V )
R
 V
C
t
R
f = 1 MHz
= 25° C
T
a
40
60
80
100
120
( V )
Reverse voltage V
R
SKF00067AED
 T
V
F
a
1.6
1.4
1.2
1.0
= 100 mA
I
F
0.8
0.6
0.4
0.2
0
−40
0
40
80
120
Ambient temperature T
a
 t
I
F(surge)
W
1 000
= 25° C
T
a
300
t
W
Non repetitive
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
10
Pulse width t
( ms )
W
10 mA
3 mA
160
200
( ° C)
I
F(surge)
30

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