Panasonic MA4Z713 Specification Sheet

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA4Z713
Silicon epitaxial planar type
For switching
For wave detection
■ Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• Forward voltage V
, optimum for low voltage rectification
F
• Optimum for high frequency rectification because of its short
reverse recovery time (t
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Peak forward Single
current Double
Forward current Single
Double
Junction temperature
Storage temperature
Note) * : Value of each diode in double diodes used.
■ Electrical Characteristics T
Parameter
Reverse current
Forward voltage
Terminal capacitance
*
Reverse recovery time
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: February 2008
(MA4S713)
)
rr
= 25°C
a
Symbol Rating
V 30
R
V 30
RM
I 150
FM
*
110
I 30
F
*
20
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
I V
R R
= 1 mA
V I
F1 F
= 30 mA
V I
F2 F
C V
t R
= I
t I
rr F
I
rr
η
V
in
R
L
Bias Application Unit N-50BU
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
Note) The part number in the parenthesis shows conventional part number.
i
■ Package
• Code
SMini4-F1
• Pin Name
1: Anode 1
2: Anode 2
■ Marking Symbol: M1N
■ Internal Connection
Unit
V
V
mA
mA
°C
°C
Conditions
= 30 V
= 1 V, f = 1 MHz
= 10 mA
R
= 1 mA, R = 100 Ω
L
= 3 V , f = 30 MHz
(peak)
= 3.9 kΩ, C = 10 pF
L
4. * : t measurement circuit
rr
Input Pulse
t t
p
r
t
10%
I
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00109CED
3: Cathode 2
4: Cathode 1
4 3
1
2
Min Typ Max
1.5
1.0
65
Output Pulse
t
rr
F
t
= 1 mA
I
rr
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
Unit
µA
1
0.4 V
1.0
pF
ns
%
1