Schottky Barrier Diodes (SBD)
MA4X746
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• Forward current (Average) I
< 50 V are achieved
V
R
• Optimum for high frequency rectification because of its short
reverse recovery time t
• Low forward voltage V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Single
Non-repetitive peak
forward surge current
Double
Single
Peak forward
current
Double
Single
Forward current
(Average)
Double
Junction temperature
Storage temperature
Note) * : Value of each diode in double diodes used.
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
4. * : t
measurement circuit
rr
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA746)
= 200 mA and Reverse voltage
F(AV)
rr
and good rectification efficiency
F
= 25°C
a
Symbol
Rating
V
50
R
V
50
RRM
I
1
FSM
*
0.75
I
300
FM
*
225
I
200
F(AV)
*
150
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F1
F
V
I
F2
F
I
V
R
C
V
t
t
I
rr
F
I
rr
Bias Application Unit (N-50BU)
A
Pulse Generator
Wave Form Analyzer
(PG-10N)
(SAS-8130)
= 50 Ω
= 50 Ω
Note) The part number in the parenthesis shows conventional part number.
R
R
s
i
0.60
Unit
V
V
EIAJ : SC-61
A
Marking Symbol: M3M
mA
Internal Connection
mA
°C
°C
Conditions
= 30 mA
= 200 mA
= 50 V
R
= 0 V, f = 1 MHz
R
= I
= 100 mA
R
= 10 mA, R
= 100 Ω
L
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00107BED
+0.02
2.90
–0.05
1.9
±0.2
(0.95)
(0.95)
3
4
0.5R
2
1
(0.2)
+0.10
–0.05
10˚
Mini4-G1 Package
3
4
2
1
Min
Typ
Max
0.36
0.55
200
30
3.0
Output Pulse
t
rr
I
F
t
= 10 mA
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.1
0.16
–0.06
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Unit
V
µA
pF
ns
1