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Panasonic MA4X746 (MA746) Specifications

Schottky barrier diodes silicon epitaxial planar type

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Schottky Barrier Diodes (SBD)
MA4X746
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• Forward current (Average) I
< 50 V are achieved
V
R
• Optimum for high frequency rectification because of its short
reverse recovery time t
• Low forward voltage V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Single
Non-repetitive peak
forward surge current
Double
Single
Peak forward
current
Double
Single
Forward current
(Average)
Double
Junction temperature
Storage temperature
Note) * : Value of each diode in double diodes used.
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
4. * : t
measurement circuit
rr
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA746)
= 200 mA and Reverse voltage
F(AV)
rr
and good rectification efficiency
F
= 25°C
a
Symbol
Rating
V
50
R
V
50
RRM
I
1
FSM
*
0.75
I
300
FM
*
225
I
200
F(AV)
*
150
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F1
F
V
I
F2
F
I
V
R
C
V
t
t
I
rr
F
I
rr
Bias Application Unit (N-50BU)
A
Pulse Generator
Wave Form Analyzer
(PG-10N)
(SAS-8130)
= 50 Ω
= 50 Ω
Note) The part number in the parenthesis shows conventional part number.
R
R
s
i
0.60
Unit
V
V
EIAJ : SC-61
A
Marking Symbol: M3M
mA
Internal Connection
mA
°C
°C
Conditions
= 30 mA
= 200 mA
= 50 V
R
= 0 V, f = 1 MHz
R
= I
= 100 mA
R
= 10 mA, R
= 100 Ω
L
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00107BED
+0.02
2.90
–0.05
1.9
±0.2
(0.95)
(0.95)
3
4
0.5R
2
1
(0.2)
+0.10
–0.05
10˚
Mini4-G1 Package
3
4
2
1
Min
Typ
Max
0.36
0.55
200
30
3.0
Output Pulse
t
rr
I
F
t
= 10 mA
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.1
0.16
–0.06
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Unit
V
µA
pF
ns
1

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Summary of Contents for Panasonic MA4X746 (MA746)

  • Page 1 Schottky Barrier Diodes (SBD) MA4X746 (MA746) Silicon epitaxial planar type For super high speed switching For small current rectification ■ Features • Two isolated elements are contained in one package, allowing high-density mounting • Forward current (Average) I = 200 mA and Reverse voltage F(AV) <...
  • Page 2 MA4X746  V −20°C = 150°C 100°C 25°C −1 −2 Forward voltage V ( V )  T = 30 V −40 Ambient temperature T (°C)  V = 150°C 100°C 25°C Reverse voltage V ( V )  V f = 1 MHz = 25°C Reverse voltage V...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.

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Ma746