Panasonic MA4X714 (MA714) Specification Sheet

Schottky Barrier Diodes (SBD)
MA4X714
Silicon epitaxial planar type
For switching
For wave detection
■ Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• Two MA3X704A (MA704A) is contained in one package (two
diodes in a different direction)
• Forward voltage V
, optimum for low voltage rectification
F
• Optimum for high frequency rectification because of its short
reverse recovery time t
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Peak forward Single
current Series
Forward current Single
Series
Junction temperature
Storage temperature
Note) * : Value of each diode in series diodes used.
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
Publication date: February 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA714)
rr
= 25°C
a
Symbol Rating
V 30
R
V 30
RM
I 150
FM
*
110
I 30
F
*
20
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F1 F
V I
F2 F
I V
R
C V
t
t I
rr F
I
rr
η
V
R
L
Note) The part number in the parenthesis shows conventional part number.
0.60
Unit
V
EIAJ: SC-61
V
Marking Symbol: M1P
mA
Internal Connection
mA
°C
°C
Conditions
= 1 mA
= 30 mA
= 30 V
R
= 1 V, f = 1 MHz
R
= I = 10 mA
R
= 1 mA, R = 100 Ω
L
= 3 V , f = 30 MHz
IN (peak)
= 3.9 kΩ, C = 10 pF
L
4. * : t measurement circuit
rr
SKH00104CED
+0.02
2.90
–0.05
1.9 ±0.2
(0.95) (0.95)
3 4
0.5R
2 1
(0.2)
+0.10
–0.05
10˚
Mini4-G1 Package
3 4
2 1
Min Typ Max
0.4
1.0
1.5
1.0
65
Unit: mm
+0.1
0.16
–0.06
1: Cathode 1
2: Anode 2
3: Cathode 2
4: Anode 1
Unit
V
µA
1
pF
ns
%
1