Panasonic MA4S111 Specification Sheet

Switching Diodes
MA4S111
Silicon epitaxial planar type
For switching circuits
■ Features
• Allowing high-density mounting
• Short reverse recovery time t
• Small terminal capacitance C
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current Single
Double
Repetitive peak Single
forward current Double
Junction temperature
Operating ambient temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t measurement circuit
rr
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: July 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
rr
t
= 25°C
a
Symbol Rating
V 80
R
V 80
RM
I 100
F
75
I 225
FRM
170
T 150
j
−30 to +85
T
opr
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V I
F F
= 100 µA
V I
R R
= 75 V
I V
R R
= 0 V, f = 1 MHz
C V
t R
= 10 mA, V
t I
rr F
= 0.1 I
I
rr
V
R
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
SKF00067AED
5˚
Unit
V
V
mA
mA
Marking Symbol: M1B
°C
Internal Connection
°C
°C
Conditions
= 6 V
R
= 100 Ω
, R
R L
Input Pulse Output Pulse
t
t
p
r
t
10%
t
rr
I
F
90%
= 0.1 I
I
rr
= 2 µs = 10 mA
t I
p F
= 0.35 ns = 6 V
t V
r R
δ = 0.05 = 100 Ω
R
L
1.6 ±0.05
1.0
±0.05
0.55
4 3
1 2
0.25 ±0.05
0.10
1: Anode 1
2: Anode 2
3: Cathode 2
4: Cathode 1
SSMini4-F1 Package
4 3
1 2
Min Typ Max
0.95 1.2
80
100
0.6 2
3
t
R
Unit: mm
±0.1
±0.03
Unit
V
V
nA
pF
ns
1