Panasonic MA4ZD14 Specification Sheet

Schottky Barrier Diodes (SBD)
MA4ZD14
Silicon epitaxial planar type
For high speed switching
■ Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• Low forward voltage: V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse-voltage
Forward current Single
Double
Peak forward Single
current Double
Non-repetitive peak Single
* 2
forward surge current Double
Junction temperature
Storage temperature
Note) * 1: Value of each diode in double diodes used.
* 2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Reverse current
Forward voltage
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
Pulse Generator
(PG-10N)
R
s
Publication date: February 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
< 0.40 V
F
= 25°C
a
Symbol Rating
V 20
R
V 20
RRM
I 100
F
* 1
75
I 300
FM
* 1
225
I 1
FSM
* 1
0.75
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
I V
R
V I
F1 F
V I
F2 F
C V
t
t I
rr F
I
rr
Bias Insertion Unit N-50BU
A
W.F. Analyzer
(SAS-8130)
= 50 Ω = 50 Ω
R
i
■ Package
• Code
• Pin Name
■ Marking Symbol: M5D
Unit
V
■ Internal Connection
V
mA
mA
A
°C
°C
Conditions
= 10 V
R
= 5 mA
= 100 mA
= 0 V, f = 1 MHz
R
= I = 100 mA
R
= 10 mA, R = 100 Ω
L
4. * : t measurement circuit
rr
Input Pulse
t t
r p
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00111CED
SMini4-F1
1: Anode 1 3: Cathode 2
2: Anode 2 4: Cathode 1
3
4
1 2
Min Typ
25
3
Output Pulse
t
t
rr
I
F
t
= 10 mA
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Max Unit
µA
20
0.27 V
0.40
pF
ns
1