Panasonic Schottky Barrier Diodes MA4ZD030G Specification

Schottky Barrier Diodes (SBD)
MA4ZD030G
Silicon epitaxial planar type
For high speed switching
For small type power supply
For DC/DC converter
■ Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• I
= 100 mA rectification is possible
F
• Optimum for high frequency rectification because of its short re-
verse recovery time (t
rr
■ Absolute Maximum Ratings T
Parameter
Forward current Single
Double
Peak forward Single
current Double
Non-repetitive peak Single
*
forward surge current Double
Reverse voltage
Repetitive peak reverse voltage
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Reverse current
Forward voltage
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4. * : t measurement circuit
rr
Publication date: June 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
)
= 25°C
a
Symbol Rating
I 100
F
75
I 300
FM
225
I 1
FSM
0.75
V 45
R
45
V
RRM
125
T
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
I V
R
V I
F F
C V
t
t I
rr F
I
rr
Bias Application Unit N-50BU
A
Pulse Generator Wave Form Analyzer
(PG-10N) (SAS-8130)
= 50 Ω = 50 Ω
R R
s i
■ Package
• Code
• Pin Name
■ Marking Symbol: M5A
Unit
■ Internal Connection
mA
mA
A
V
V
°C
°C
Conditions
= 40 V
R
= 100 mA
= 0 V, f = 1 MHz
R
= I = 100 mA
R
= 10 mA, R = 100 Ω
L
Input Pulse
t t
r p
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00231AED
SMini4-F2
1: Anode 1 3: Cathode 2
2: Anode 2 4: Cathode 1
3
4
1 2
Min Typ
0.54
12
1.2
Output Pulse
t
t
rr
I
F
t
= 10 mA
I
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Max Unit
µA
5
0.60 V
18 pF
ns
1