Panasonic MA4X159A Specification Sheet

Switching Diodes
MA4X159A
Silicon epitaxial planar type
For switching circuits
Features
Two isolated elements contained in one package, allowing high-
density mounting
Short reverse recovery time t
Small terminal capacitance C
Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current Single
Double
Single
Peak forward
current
Double
Single
Non-repetitive peak
*
forward surge current
Double
Junction temperature
Storage temperature
Note) * : t 1 s
Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
R 50
s
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA159A)
rr
t
25 C
a
Symbol Rating
V 80
R
V 80
RM
I 100
F
75
I 225
FM
170
I 500
FSM
375
T 150
j
T 55 to 150
stg
25 C 3 C
a
Symbol
V I = 100 mA
F F
V I = 100 A
R R
I V = 75 V
R R
C V = 0 V, f = 1 MHz
t R
t I = 10 mA, V
rr F
I = 0.1 I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R 50
Note) The part number in the parenthesis shows conventional part number.
i
SKF00043BED
(0.2)
+0.10
0.60
–0.05
10˚
Unit
V
V
mA
EIAJ: SC-61
mA
Marking Symbol: M1B
Internal Connection
mA
C
C
Conditions
= 6 V
R
, R = 100
R L
Input Pulse
t
t
r p
t
10%
90%
V
R
t 2 s
p
t 0.35 ns
r
0.05
Unit: mm
+0.20
2.90
–0.05
1.9
0.2
+0.10
0.16
(0.95) (0.95)
–0.06
3 4
0.5R
2 1
+0.10
0.40
–0.05
1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1
Mini4-G1 Package
3 4
2 1
Min Typ Max
0.95 1.20
80
100
0.9 2.0
3
Output Pulse
t
rr
I
F
t
I 0.1 I
rr R
I 10 mA
F
V 6 V
R
R 100
L
Unit
V
V
nA
pF
ns
1