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Panasonic 2SB0710A Specification Sheet page 2

Silicon pnp epitaxial planar type transistors

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2SB0710A
2SB0710A_ P
P
 T
C
240
160
80
0
0
80
40
Ambient temperature T
2SB0710A_ V
V
 I
CE(sat)
−10
−1
T
= 75°C
a
−10
−1
−10
−2
−1
−10
Collector current I
2SB0710A_ f
f
 I
T
240
V
= −10 V
CE
T
= 25°C
a
160
80
0
1
10
Emitter current I
2
This product complies with the RoHS Directive (EU 2002/95/EC).
-T
C
a
a
−800
−600
−400
−200
0
120
160
0
(°C)
Collector-emitter voltage V
a
-I
CE(sat)
C
C
−10
I
/ I
= 10
C
B
−1
−10
−1
−25°C
25°C
−10
−2
−10
2
−10
3
−1
(mA)
C
- I
T
E
E
24
16
8
0
10
2
−1
(mA)
Collector-base voltage V
E
2SB0710A_ I
-V
C
CE
I
 V
C
CE
T
= 25°C
a
I
= −10 mA
B
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
−4
−8
−12
(V)
CE
2SB0710A_ V
-I
BE(sat)
C
V
 I
BE(sat)
C
I
/ I
= 10
C
B
T
= −25°C
a
75°C
25°C
−10
−10
2
−10
3
Collector current I
(mA)
C
2SB0710A_ C
- V
ob
CB
C
 V
ob
CB
I
= 0
E
f = 1 MHz
T
= 25°C
a
−10
−10
2
(V)
CB
SJC00413AED
2SB0710A_ I
- I
C
B
I
 I
C
B
−800
V
= −10 V
CE
T
= 25°C
a
−600
−400
−200
0
0
−4
−8
Base current I
(mA)
B
2SB0710A_ h
- I
FE
C
h
 I
FE
C
400
V
CE
300
T
= 75°C
a
200
25°C
−25°C
100
0
−10
−10
2
Collector current I
(mA)
C
2SB0710A_ V
- R
CER
BE
V
 R
CER
BE
−120
I
= −2 mA
C
T
= 25°C
a
−80
−40
0
1
10
10
2
Base-emitter resistance R
BE
= −10 V
−10
3
10
3
(kΩ)

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