Panasonic 2SB1679G Specification Sheet

Transistors
2SB1679G
Silicon PNP epitaxial planar type
For low-frequency amplification
■ Features
• Large collector output capacitance (Common base, input open cir-
cuited) C
ob
• Low collector-emitter saturation voltage V
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank
h
FE1
Publication date: April 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
−15
V
CBO
−10
V
CEO
−7
V
EBO
− 0.5
I
C
−1
I
CP
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
I V
CBO CB
* 1 * 2
h V
FE1 CE
h V
FE2 CE
* 1
V I
CE(sat) C
* 1
V I
BE(sat) C
f V
T CB
C V
ob CB
R S
130 to 220 180 to 350
Unit
V
V
V
A
A
mW
°C
°C
Conditions
= −10 µA, I = 0
E
= −1 mA, I = 0
B
= −10 µA, I = 0
C
= −10 V, I = 0
E
= −2 V, I = − 0.5 A
C
= −2 V, I = −1 A
C
= − 0.4 A, I = −8 mA
B
= − 0.4 A, I = −8 mA
B
= −10 V, I = 50 mA, f = 200 MHz
E
= −10 V, I = 0, f = 1 MHz
E
SJC00355AED
■ Package
• Code
SMini3-F2
• Marking Symbol: 3V
• Pin Name
1. Base
2. Emitter
3. Collector
Min Typ Max
−15
−10
−7
−100
130 350
60
− 0.16 − 0.30
− 0.8 −1.2
130
22
Unit
V
V
V
nA

V
V
MHz
pF
1