Download Print this page

Panasonic 2SB1321A Specification Sheet

Silicon pnp epitaxial planar type transistors

Advertisement

Quick Links

Transistors
2SB1321A
Silicon PNP epitaxial planar type
For low-frequency output amplification and driver amplification
Complementary to 2SD1992A
■ Features
• Allowing supply with the radial taping
• Large collector power dissipation P
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank
h
FE1
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
(600 mW)
C
= 25°C
a
Symbol
Rating
−60
V
CBO
−50
V
CEO
−7
V
EBO
− 0.5
I
C
−1
I
CP
P
600
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= −10 µA, I
V
I
CBO
C
= −2 mA, I
V
I
CEO
C
= −10 µA, I
V
I
EBO
E
I
V
CBO
CB
I
V
CEO
CE
* 2
h
V
FE1
CE
* 1
h
V
FE2
CE
= −300 mA, I
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
Q
R
85 to 170
120 to 240
Unit
V
V
V
A
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= −20 V, I
= 0
E
= −20 V, I
= 0
B
= −10 V, I
= −10 mA
C
= −10 V, I
= −500 mA
C
= −30 mA
B
= −10 V, I
= 10 mA, f = 200 MHz
E
= −10 V, I
= 0, f = 1 MHz
E
S
No-rank
170 to 340
85 to 340
SJC00079BED
6.9
±0.1
(0.7)
(4.0)
0.65 max.
+0.10
0.45
–0.05
1.05
±0.05
2.5
2.5
±0.5
±0.5
1
2
3
MT-1-A1 Package
Min
Typ
Max
−60
−50
−7
− 0.1
−1
85
340
40
− 0.35 − 0.60
200
6
Unit: mm
2.5
±0.1
(0.8)
+0.10
0.45
–0.05
1: Emitter
2: Collector
3: Base
Unit
V
V
V
µA
µA
V
MHz
15
pF
1

Advertisement

loading

Summary of Contents for Panasonic 2SB1321A

  • Page 1 Transistors 2SB1321A Silicon PNP epitaxial planar type For low-frequency output amplification and driver amplification Complementary to 2SD1992A ■ Features • Allowing supply with the radial taping • Large collector power dissipation P ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open)
  • Page 2 2SB1321A  T ( °C ) Ambient temperature T  I CE(sat) −100 = 10 −10 −1 = 75°C 25°C −25°C − 0.1 − 0.01 − 0.01 − 0.1 −1 −10 ( A ) Collector current I  I = −10 V = 25°C...
  • Page 3  T = −10 V ( °C ) Ambient temperature T SJC00079BED 2SB1321A...
  • Page 4 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.