Transistors
2SB1321A
Silicon PNP epitaxial planar type
For low-frequency output amplification and driver amplification
Complementary to 2SD1992A
■ Features
• Allowing supply with the radial taping
• Large collector power dissipation P
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * 1: Pulse measurement
* 2: Rank classification
Rank
h
FE1
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
(600 mW)
C
= 25°C
a
Symbol
Rating
−60
V
CBO
−50
V
CEO
−7
V
EBO
− 0.5
I
C
−1
I
CP
P
600
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= −10 µA, I
V
I
CBO
C
= −2 mA, I
V
I
CEO
C
= −10 µA, I
V
I
EBO
E
I
V
CBO
CB
I
V
CEO
CE
* 2
h
V
FE1
CE
* 1
h
V
FE2
CE
= −300 mA, I
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
Q
R
85 to 170
120 to 240
Unit
V
V
V
A
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= −20 V, I
= 0
E
= −20 V, I
= 0
B
= −10 V, I
= −10 mA
C
= −10 V, I
= −500 mA
C
= −30 mA
B
= −10 V, I
= 10 mA, f = 200 MHz
E
= −10 V, I
= 0, f = 1 MHz
E
S
No-rank
170 to 340
85 to 340
SJC00079BED
6.9
±0.1
(0.7)
(4.0)
0.65 max.
+0.10
0.45
–0.05
1.05
±0.05
2.5
2.5
±0.5
±0.5
1
2
3
MT-1-A1 Package
Min
Typ
Max
−60
−50
−7
− 0.1
−1
85
340
40
− 0.35 − 0.60
200
6
Unit: mm
2.5
±0.1
(0.8)
+0.10
0.45
–0.05
1: Emitter
2: Collector
3: Base
Unit
V
V
V
µA
µA
V
MHz
15
pF
1