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Panasonic 2SA1748 Specification Sheet page 2

Silicon pnp epitaxial planar type transistors
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2SA1748
 T
P
C
a
200
160
120
80
40
0
0
40
80
Ambient temperature T
 I
V
CE(sat)
−100
−10
−1
= 75°C
T
a
25°C
− 0.1
−25°C
− 0.01
−1
−10
−100
Collector current I
C
 V
C
ob
CB
6
5
4
3
2
1
0
−1
−10
Collector-base voltage V
2
This product complies with the RoHS Directive (EU 2002/95/EC).
−120
−100
−80
−60
−40
−20
0
−2
120
160
0
( °C )
Collector-emitter voltage V
a
C
600
= 10
I
/ I
C
B
500
400
300
200
100
0
− 0.1
−1 000
( mA )
Collector current I
= 0
I
E
f = 1 MHz
= 25°C
T
a
−100
( V )
CB
 V
I
C
CE
= 25°C
T
a
= −300 µA
I
B
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
−4
−6
−8
−10
−12
( V )
CE
 I
h
FE
C
= −10 V
V
CE
= 75°C
T
a
25°C
−25°C
−1
−10
−100
( mA )
C
SJC00028BED
 V
I
C
BE
−60
V
CE
25°C
−50
= 75°C
−25°C
T
a
−40
−30
−20
−10
0
− 0.2
− 0.4
− 0.6
− 0.8
0
Base-emitter voltage V
BE
 I
f
T
E
600
V
CB
= 25°C
T
a
500
400
300
200
100
0
0.1
1
10
( mA )
Emitter current I
E
= −10 V
−1.0
−1.2
( V )
= −10 V
100

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