Pin Description - Denon DN-HS5500 Service Manual

Direct drive turntable media player & controller
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W9812G6GH-6 (IC104, 105, 502, 503)

PIN DESCRIPTION

PIN NUMBER
23 - 26, 22,
29 - 35
20, 21
2, 4, 5, 7, 8,
10, 11, 13, 42,
44, 45, 47, 48,
50, 51, 53
19
18
17
16
39, 15
38
37
1, 14, 27
28, 41, 54
3, 9, 43, 49
6, 12, 46, 52
36, 40
V
1
CC
2
DQ0
3
V
Q
CC
DQ1
4
5
DQ2
6
V
Q
SS
DQ3
7
DQ4
8
V
Q
9
CC
DQ5
10
DQ6
11
V
Q
12
SS
DQ7
13
V
14
CC
LDQM
15
16
WE
CAS
17
RAS
18
CS
19
20
BS0
BS1
21
A10/AP
22
A0
23
24
A1
25
A2
26
A3
27
Vcc
PIN NAME
FUNCTION
A0 - A11
Address
BS0, BS1
Bank Select
DQ0 -
Data Input/
DQ5
Output
Chip Select
CS
Roe Address
RAS
Strobe
Column Address
CAS
Strobe
Write Enable
WE
UDQM/
Input/Output
LDQM
Mask
CLK
Clock Inputs
CKE
Clock Enable
Vcc
Power (+3.3V)
Vss
Ground
Power (+3.3V)
VccQ
for I/O Buffer
Ground for I/O
VssQ
Buffer
NC
No Connection
39
DN-HS5500
54
V
SS
53
DQ15
52
VssQ
51
DQ14
50
DQ13
49
V
Q
CC
48
DQ12
DQ11
47
V
Q
46
SS
45
DQ10
44
DQ9
V
Q
43
CC
42
DQ8
41
V
SS
40
NC
39
UDQM
38
CLK
CKE
37
36
NC
35
A11
34
A9
33
A8
32
A7
31
A6
30
A5
29
A4
28
Vss
DESCRIPTION
Multiplexed pins for row and column address.
Row address: A0 - A11. Column address: A0 - A8.
Select bank to activate during row address latch time,
or bank to read/write during address latch time.
Multiplexed pins for data output and input.
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
Command input, When sampled at the rising edge of
the clock, RAS, CAS and WE define the operation
to be executed.
Referred to RAS
Referred to RAS
The output buffer is placed at Hi-Z (with latency of 2)
when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write operation
with zero latency.
System clock used to sample inputs on the rising edge
of clock.
CKE controls the clock activation and deactivation.
When CKE is low, Power Down mode, Suspend mode
or Self Refresh mode is entered.
Power for input buffers and logic circuit inside DRAM.
Ground for input buffers and logic circuit inside DRAM.
Separated power from Vcc, used for output buffers to
improve noise.
Separated power from Vss, used for output buffers to
improve noise.
No Connection

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