Fig 15 Ac Characteristics For Sram - Nokia RH-9 Series Ccs Technical Documentation

CCS Technical Documentation
AC CHARACTERISTICS
Parameter List
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Read
Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Read
There are two different ways to read from the SRAM. However the only difference
between these two read cycles is whether the output will be valid until new address at
the input or the output only will be valid for a short period and then put to high imped-
ance mode.
Issue 1 11/02
(Vcc=1.65~2.2V, Industrial product:
Symbol
Min
tRC
70
tAA
-
t CO
-
tOE -
tLZ
10
tOLZ
5
tHZ 0
tOHZ 0
tOH
10
tWC
70
tCW 60
tAS 0
tAW 60
tWP
50
tWR
0
tWHZ 0
tDW
30
tDH
0
tOW
5
Figure 16: Timing diagrams of read cycles
ãNokia Corporation
System Module & UI
A=-40 to 85°C)
T
Speed Bins
70ns 85ns
Max Min Max
- 85 -
70 - 85
70 - 85
35 - 40
- 10 -
- 5 -
25 0 25
25 0 25
- 10 -
- 85 -
- 70 -
- 0 -
- 70 -
- 60 -
- 0 -
20 0 25
- 35 -
- 0 -
- 5 -
RH-9
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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