Samsung M471B1G73AH0 Hardware User Manual page 24

204pin unbuffered sodimm based on 4gb a-die
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Unbuffered SODIMM
[ Table 16 ] DDR3-1600 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Internal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
CL = 11
Supported CL Settings
Supported CWL Settings
datasheet
Symbol
tAA
tRCD
tRP
tRC
tRAS
CWL = 5
tCK(AVG)
CWL = 6,7,8
tCK(AVG)
CWL = 5
tCK(AVG)
CWL = 6
tCK(AVG)
CWL = 7, 8
tCK(AVG)
CWL = 5
tCK(AVG)
CWL = 6
tCK(AVG)
CWL = 7
tCK(AVG)
CWL = 8
tCK(AVG)
CWL = 5
tCK(AVG)
CWL = 6
tCK(AVG)
CWL = 7
tCK(AVG)
CWL = 8
tCK(AVG)
CWL = 5,6
tCK(AVG)
CWL = 7
tCK(AVG)
CWL = 8
tCK(AVG)
CWL = 5,6
tCK(AVG)
CWL = 7
tCK(AVG)
CWL = 8
tCK(AVG)
CWL = 5,6,7
tCK(AVG)
CWL = 8
tCK(AVG)
DDR3-1600
11-11-11
min
max
13.75
20
8
(13.125)
13.75
-
8
(13.125)
13.75
-
8
(13.125)
48.75
-
8
(48.125)
35
9*tREFI
3.0
3.3
Reserved
2.5
3.3
Reserved
Reserved
Reserved
1.875
<2.5
Reserved
Reserved
Reserved
1.875
<2.5
Reserved
Reserved
Reserved
1.5
<1.875
Reserved
Reserved
1.5
<1.875
Reserved
Reserved
1.25
<1.5
5,6,7,8,9,10,11
5,6,7,8
- 24 -
Rev. 1.0
DDR3 SDRAM
Units
NOTE
ns
ns
ns
ns
ns
ns
1,2,3,4,7,9,10
ns
4
ns
1,2,3,7
ns
1,2,3,4,7
ns
4
ns
4
ns
1,2,3,4,7
ns
1,2,3,4,7
ns
4
ns
4
ns
1,2,3,7
ns
1,2,3,4,7
ns
1,2,3,4
ns
4
ns
1,2,3,4,7
ns
1,2,3,4
ns
4
ns
1,2,3,7
ns
1,2,3,4
ns
4
ns
1,2,3,8
nCK
nCK

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