Agilent Technologies 66111A User Manual page 152

B - Verification and Calibration
Table B-2. Verification Test Record for Agilent Model 66111A
Model Agilent 66111A
Test Description
Low Voltage
Front Panel measurement
High Voltage
Front Panel measurement
Low Current
High Current
Front Panel measurement
Low Current Sink measurement
High Current Sink measurement
Table B-3. Verification Test Record for Agilent Model 66311B/D
Model Agilent___________
Test Description
Low Voltage
Front Panel measurement
High Voltage
Front Panel measurement
Low Current
High Current
Front Panel measurement
Low Current measurement
High Current measurement
Low Current Sink measurement
High Current Sink measurement
Positive Voltage measurement
Negative Voltage measurement
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Report No.____________ Date_____________
Minimum
Specification
Voltage Programming and Measurement
−10 mV
Vlo
Vlo −5 mV
Vfplo
Vhi 14.982 V
Vhi −9.5 mV
Vfphi
Current Programming and Measurement
−1.33 mA
Ilo
Ihi 2.9972 A
Ihi −15 mA
Ifphi
Current Sink Measurement
Isinklo −22.5 µA
Isinklo
Isinklo −13 mA
Isinkhi
Report No.____________ Date_____________
Minimum
Specification
Voltage Programming and Measurement
−10 mV
Vlo
Vlo −5 mV
Vfplo
Vhi 14.982 V
Vhi −9.5 mV
Vfphi
Current Programming and Measurement (High Range)
−1.33 mA
Ilo
Ihi 2.9972 A
Ihi −6.5 mA
Ifphi
Current Measurement (Low Range)
Ilrlo −2.5 µA
Ilrlo
Ilrhi −22.5 µA
Ilrhi
Current Sink Measurement
Isinklo −22.5 µA
Isinklo
Isinkhi −5.1 mA
Isinkhi
DVM Voltage Measurement (Agilent 66311D only)
Dvpos −15 mV
Dvpos
Dvneg −6.8 mV
Dvneg
Recorded Results
Specification
_____mV
_____mV
_______V
_______V
_____mA
_______A
_______A
Isinklo +22.5 µA
_____mA
_____A Isinklo +13 mA
Recorded Results
Specification
_____mV
_____mV
_______V
_______V
_____mA
_______A
_______A
_____µA
Ilrhi +22.5 µA
_____mA
Isinklo +22.5 µA
_____mA
_____A Isinkhi +5.1 mA
_____V Dvpos +15 mV
_____V Dvneg +6.8 mV
Maximum
+10 mV
Vlo +5 mV
15.018 V
Vhi +9.5 mV
1.33 mA
3.0028 A
Ihi +15 mA
Maximum
+10 mV
Vlo +5 mV
15.018 V
Vhi +9.5 mV
1.33 mA
3.0028 A
Ihi +6.5 mA
Ilrlo +2.5 µA