onsemi EVBUM2920/D User Manual

Half-bridge power module based on ncp58921 650 v integrated driver gan evaluation board

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Half‐Bridge Power Module
Based on NCP58921 650 V
Integrated Driver GaN
Evaluation Board User's
Manual
EVBUM2920/D
Description
The evaluation board user's manual provides basic information
about the Half-Bridge Power Module with DC-DC power supply
which is based on NCP58921 650 V Integrated Driver GaN Power
Switch. It is designed as a universal building block for that is suitable
for the most topologies requiring Half-Bridge (HB) arrangement. This
building was designed to easily test NCP58921 performance in
various converter types. Evaluation board contains Power HB Stage
using NCP58921 or other member of family (NCP58922), the dual
insulated DC-DC power supply dedicated for each power switch, and
it's driven by NCP1392, Galvanically Insulated Driver NCP51561
which is supplied with 5 V LDO regulator NCP718. Simple
modification of HB Module enables to implement it into LLC Stage.
The Half-Bridge Power Module was designed to offer 600 V
insulation level while its dimensions are still compact. Insulation level
is possible to enhance with stretching PCB size. The NCP5892x
integrated implementation significantly reduces circuit and package
parasitics while enabling more compact design. The NCP58921
integrates a high-performance, high frequency, driver and a 650 V,
50 mW Gallium-Nitride (GaN) High Electron Mobility Transistors
(HEMT) in a single switch structure while NCP58922 is a very similar
device that integrates 650 V, 78 mW GaN HEMT. The Insulated Metal
Substrate (IMS) board was selected to extend thermal performance of
NCP5892x devices. HB Power Module utilizes flux canceling loop
(FCL) to reduce stray inductance of power path and minimize
switching node overshoots. This manual provides brief information
about Integrated Driver GaN implementation, its schematic diagram
and interfacing. Please use links in the literature section to get detailed
technical information about NCP58921, NCP58922, NCP51561,
NCP1392 and NCP718 devices that manual refers to.
© Semiconductor Components Industries, LLC, 2024
November, 2024 − Rev. 0
EVAL BOARD USER'S MANUAL
Figure 1. Board Photo
VDR
11
VDR GND
12
NC
13
LDO OUT
14
VDD
C
VDD
2.2 mF/
IN
2.5 V
+5 V out
C
GND
100 nF/
10 V
Figure 2. NCP58921 Pin Assignment with its
Minimum Component Schematic
1
www.onsemi.com
DRAIN
10
9
8
7
6
5
4
3
2
1
NCP58921
Pinout − Top view
EXPOSED PAD = SOURCE
15
16
17
18
19
20
21
22
SOURCE
NCP58921
1−10
13
DRAIN
16
NC
VDD
EN
18
VDR
INPUT
REG.
GaN
DRV
LOGIC
&
HEMT
IN
17
&
UVLO
UVLO
14
LDO
OUT
LDO
15
GND
VDR_GND
SOURCE
VDR
11
12
R
ON
C
VDR
0R
100 nF/25 V
Publication Order Number:
EVBUM2920/D
26
25
24
23
DRAIN
SOURCE

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Summary of Contents for onsemi EVBUM2920/D

  • Page 1 Based on NCP58921 650 V Integrated Driver GaN Evaluation Board User's Manual EVBUM2920/D Description The evaluation board user’s manual provides basic information about the Half-Bridge Power Module with DC-DC power supply which is based on NCP58921 650 V Integrated Driver GaN Power Switch.
  • Page 2 EVBUM2920/D Basic Parameters technology and a 650 V, 50 mW Gallium-Nitride (GaN) • 400 V recommended V voltage (limited by MLLC High Electron Mobility Transistors (HEMT) in a single switch structure. The powerful combination of the Si driver rating) •...
  • Page 3 EVBUM2920/D Principle Block Diagram Description Power Module portion is Half-Bridge power stage made of The Half-Bridge Power Module with DC-DC power two NCP5892x devices. The power Stage also includes supply principal block diagram is shown in Figure 3. The MLCC capacitors that are local decoupling devices covering...
  • Page 4 EVBUM2920/D NCP51561 allows to set the input signal configuration 100% through the ANB pin which is grounded in this case and that 125 °C Max @ 70% V means dual input operation so both inputs/ outputs are rated controlled independently while deadtime is always applied 105 °C Max @ 70% V...
  • Page 5 EVBUM2920/D 100 nF MLCC for Half-Bridge Stage +V supply out if they are complying with desired performance. In case decoupling. In general, it’s strongly recommended to that decoupling capacitor are still too hot, then the two or implement more capacitors, the mixture of multiple values...
  • Page 6 EVBUM2920/D Figure 7. Isolated Driver and Half-bridge Power Stage Schematic Diagram www.onsemi.com...
  • Page 7 EVBUM2920/D • HB pin is grounded (merged with GND) to ground floating section of driver and refer both driver cell outputs to ground. • Bootstrap circuit is removed; thus, bootstrap diode and resistor are not needed anymore. • VCC and VBOOT are merged to same supply voltage...
  • Page 8 EVBUM2920/D CH1/CH2 − Drain-Source Voltage of Q1A/Q1B CH5/CH6 – IC5 MLOWER / IC5 MUPPER CH8 – X1 primary current (Pin 2) CH3/CH4 – X1 Secondary Voltage Pins 6/4 CH7 – Output Voltage VCC_A Figure 9. DC-DC Converter Waveforms Using R13 = 3.9 kW. Operating Frequency 426 kHz CH1/CH2 –...
  • Page 9 EVBUM2920/D Half-bridge Module Construction Description for straightforward copper routing and connection with This section provides comments on the construction of the primary side of NCP51561. The NCP1392 was placed on the Half-Bridge Power Module and mainly relies on Figure 12, same side due to free area space and requirement to keep it off that is based on three pictures.
  • Page 10 EVBUM2920/D In Figure 12 picture right, is a drawing that shows picture in Figure 13 shows PCB stack, the PCB has four copper layers with 96 mm thickness while laminates information about module dimensions (all dimensions are thickness is 200 mm. The 96 mm copper thickness is shown in units of mm) as well as recommended drill size and positions for creating land pattern.
  • Page 11 EVBUM2920/D Top Assembly Bottom Assembly Figure 14. HB Power Module PCB Assembly Half-bridge Module PCB Assembly Description ensures heatsink electrical insulation from SOURCE of each Figure 14 show PCB assembling top (picture left) and switching device. Another important feature of the TIM part bottom side (picture left).
  • Page 12 EVBUM2920/D For the initial evaluation in application is recommended to = 33 W. start with R CH1 − V Switching node Voltage CH3 − V Low−side IN Input Voltage CH8 − I Inductor Current CH1 − V Switching node Voltage CH3 −...
  • Page 13 EVBUM2920/D CH1 – V Switching node Voltage CH3 – V Low−side IN Input Voltage CH8 – I Inductor Current CH1 – V Switching node Voltage CH3 – V Low−side IN Input Voltage CH8 – I Inductor Current Resistance 33−47 W (NCP58921) Figure 17.
  • Page 14: Thermal Performance

    EVBUM2920/D Thermal Performance doesn’t have to be so high to generate required heat. Once, NCP5892x power devices may dissipate significant DC power based thermal measurement is done and thermal amounts of power losses depending on operation and setup. resistance is known, then it’s easy to calculate losses back NCP5892x family offers devices housed in TQFN26 that are from temperature rise.
  • Page 15 EVBUM2920/D @ 25 °C estimated @ 50 °C @25 °C estimated @ 50 °C estimated @ 75 °C LIMIT estimated @ 75 °C LIMIT Total Power Dissipation per one Device (W) Total Power Dissipation per one Device (W) Passive Cooling Forced Airflow Figure 21.
  • Page 16: Useful Links

    EVBUM2920/D USEFUL LINKS NCP58920, Enhanced Mode GaN Power Switch with Integrated Driver https://www.onsemi.com/download/data−sheet/pdf/ncp58920−d.pdf NCP58921, Enhanced Mode GaN Power Switch with Integrated Driver https://www.onsemi.com/download/data−sheet/pdf/ncp58921−d.pdf NCP58922, Enhanced Mode GaN Power Switch with Integrated Driver https://www.onsemi.com/download/data−sheet/pdf/ncp58922−d.pdf NCP1392, MOSFET Driver, High Voltage, Half Bridge, with Inbuilt Oscillator https://www.onsemi.com/download/data−sheet/pdf/ncp1392−d.pdf...
  • Page 17: Bill Of Materials

    EVBUM2920/D BILL OF MATERIALS Parts Value Device Package Tolerance Manufacturer 1 mF/25 V ±20% Capacitor C0402 various various ±20% C10, C11 220 nF/25 V Capacitor C0603 885012206073 Wurth ±5% C12, C13 100 pF/50 V Capacitor C0402 885012205055 Wurth 2.2 mF/25 V ±20%...
  • Page 18: Additional Information

    LIMITATIONS OF LIABILITY: onsemi shall not be liable for any special, consequential, incidental, indirect or punitive damages, including, but not limited to the costs of requalification, delay, loss of profits or goodwill, arising out of or in connection with the board, even if onsemi is advised of the possibility of such damages. In no event shall onsemi’s aggregate liability from any obligation arising out of or in connection with the board, under any theory of liability, exceed the purchase price paid for the board, if any.

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