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3. SPECIFICATIONS
OSCILLOSCOPE SPECIFICATIONS
Sampling rate
Analog bandwidth
Input resistance
Coupling
Test voltage range
Vertical sensitivity
Horizontal time base
Trigger modes
Trigger types
MEASURABLE COMPONENTS
Triodes
h
> 10, h
< 600
FE
FE
Diodes
Durchlassspannungsabfall < 5 V
Zener diodes
1-2-3 Testbereich: 0,01 - 4,5 V
K-A-A Testbereich: 0,01 - 24 V
Field effect transistors
JFET
IGBT
MOSFET
Silicon rectifier &
thyristor triodes
Einschaltspannung < 5 V
Gate-Triggerstrom < 6 mA
Capacitors
25 pF - 100 mF
10 MS/s
0 - 500 kHz
1 MΩ
AC / DC
1:1: 80Vpp (-40 - 40 V) / 10:1: 800Vpp (-400 V - 400 V)
10 mV/Div - 10 V/Div
10 µs - 10s
Automatic, normal, single
Falling edge, rising edge
Amplification (h
), base-emitter-voltage (U
FE
collector-emitter reverse cut-off current (I
protection diode forward voltage drop (U
Forward voltage drop, junction capacitance reverse
leakage current
1-2-3: Forward voltage drop, reverse breakdown voltage
K-A-A: Reverse breakdown voltage
JFET: Gate capacitance (C
protection diode forward voltage drop (Uf),
IGBT: drain current (I
voltage drop (U
)
f
MOSFET: turn-on voltage (V
drain-source resistance (R
forward voltage drop (U
Gate voltage
Capacity, loss factor (V
3
), drain current (I
g
at V
), protection diode forward
d
gs
), gate capacitance (C
t
), protection diode
ds
)
f
)
loss
),
be
, I
),
CEO
CES
)
f
at V
),
d
gs
),
g
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