This IMS evaluation platform demonstrates an effective way to improve heat transfer, to increase power density and reduce system cost. An Insulated Metal Substrate PCB (IMS PCB) is used to cool GaN Systems’ bottom-side cooled power transistors. An IMS PCB is also known as Metal Core/Aluminum PCB.
(Enhancement mode High Electron Mobility Transistors) in high power, high efficiency applications. The IMS 2 half bridge power board is populated with GaN Systems’ GS66516B (bottom-side cooled E-HEMT, rated at 650 V / 25 mΩ) or GS66508B (bottom-side cooled E-HEMT, rated at 650 V / 50 mΩ). The embedded ®...
Evaluate the GaN E-HEMT performance in any half bridge based topology, over a range of operating conditions. This can be done using either the accompanying power motherboard (P/N: GSP665HPMB-EVBIMS2) or with the users’ own board for in-system prototyping. • Use as a thermal and electrical design reference of the GS66516B or GS66508B GaN ®...
The IMS 2 evaluation platform is implemented as a two-board asssembly. The gate drive circuitry is assembled on the GSP665HPMB-EVBIMS2, a multi-layer FR4 PCB mother board. This includes the gate driver ICs, an isolated push-pull power supply to power the driver IC, and DC decoupling capacitors.
1.4 IMS 2 EVB Mother Board GaN Systems offers a high-power IMS 2 evaluation board that can be purchased separately. The ordering part number is GSP665HPMB-EVBIMS2. It can be used as a platform for evaluating the IMS board in any half or full bridge topology.
GSP665x-EVBIMS2 High Power IMS 2 Evaluation Platform Technical Manual _____________________________________________________________________________________________________________________ 2 Test Results 2.1 Double pulse test (GSP665HPMB-EVBIMS2 + GSP66508HB-EVBIMS2) • Test condition: V = 400V, I = 30A, V = +6V/-3V, L = 37uH, No RC Snubber, T =25℃...
GSP665x-EVBIMS2 High Power IMS 2 Evaluation Platform Technical Manual _____________________________________________________________________________________________________________________ 2.2 Full power emulation test (GSP665HPMB-EVBIMS2 + GSP66508HB-EVBIMS2) • Test condition: V = 400V, f =500kHz, Po=1kW, T = 25℃. • Device case temperature 57℃ Vdc+ Vdc+ Power Source Gate...
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High Power IMS Evaluation Platform Technical Manual ___________________________________________________________________________________________________________________ Bottom Layer Mid Layer 2 IMS 2 EVB mother board PCB layout (4-layer PCB) - GSP665HPMB-EVBIMS2 IMS 2 EVB mother board Bill of Materials (BOM) – GSP665HPMB-EVBIMS2 Quant Manufacturer Part Designator Description...
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The information given in this document shall not in any event be regarded as a guarantee of performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights.
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