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Gan Systems GS66508T-EVBHB User Manual

650v gan e-hemt half bridge evaluation board
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_____________________________________________________________________________________________________________________
GS66508T-EVBHB 650V GaN E-HEMT Half
Bridge Evaluation Board
User's Guide
Visit
www.gansystems.com
DANGER!
Electrical Shock Hazard - Hazardous high voltage may be present on the
board during the test and even brief contact during operation may result
in severe injury or death. Follow all locally approved safety procedures
when working around high voltage.
Never leave the board operating unattended. After it is de-energized,
always wait until all capacitors are discharged before touching the board.
This board should be handled by qualified personnel ONLY.
CAUTION:
This product contains parts that are susceptible to damage by electrostatic
discharge (ESD). Always follow ESD prevention procedures when
handling the product.
GS66508T-EVBHB UG rev. 150917
GaN E-HEMT Half Bridge Evaluation Board
for the latest version of this user's guide.
© 2015 GaN Systems Inc.
Please refer to the Evaluation Board/Kit Important Notice on page 21
GS66508T-EVBHB 650V
User's Guide
www.gansystems.com
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Summary of Contents for Gan Systems GS66508T-EVBHB

  • Page 1 GS66508T-EVBHB 650V GaN E-HEMT Half Bridge Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ GS66508T-EVBHB 650V GaN E-HEMT Half Bridge Evaluation Board User’s Guide Visit www.gansystems.com for the latest version of this user’s guide. DANGER! Electrical Shock Hazard - Hazardous high voltage may be present on the board during the test and even brief contact during operation may result in severe injury or death.

  • Page 2: Functional Overview

    Please refer to the circuit schematic in appendix for all signal names, circuit nodes and test points. The block diagram of the GS66508T-EVBHB can be seen in Figure 1. All components are mounted on the top side except for E-HEMTs, Q1 and Q2, which are mounted on the bottom side of the EVB. A heatsink is mounted from the bottom side as well, in order provide cooling for the two GaN E-HEMTs.
  • Page 3 _____________________________________________________________________________________________________________________ Figure 2 - Board overhead view Figure 3 - Board bottom view –showing 2x GS66508T with heatsink removed GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 21...
  • Page 4 J3 to EXT position (external, supplied by user on J2). Remove R13/R14 (R5/R6 for J2) if high impedance input is required (e.g. from the logic output of a microcontroller). GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc.
  • Page 5 Dead time is controlled by two RC delay circuits, R16/C15 and R22/C19. By default, 100ns dead time is used. Additionally two potentiometers locations are provided (TR1/TR2, not included) to allow fine adjustment of the dead time if needed. GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com...

  • Page 6: Gate Driver Circuit

    Miller turn-on and oscillation. For turn-off it is recommended to use a small value of less than 2Ω for the turn-off gate resistors R10/R21. This will provide a strong pull-down during turn- off and reduce the Miller voltage effects. GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com...
  • Page 7 The pads are on a 0.1” grid to allow users to experiment with their own gate driver circuit. In this case the existing gate drive circuit(s) should be de- populated from the EVB. GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com...
  • Page 8 Use a thermal camera or attach thermocouples through the two PCB holes for monitoring the device temperature. GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 21...

  • Page 9: Power Stage Setup

    Generally it is recommended to use toroid power inductor with low inter- winding capacitance to obtain best switching performance. For pulse testing we used 2x 60uH/40Amp inductor (CWS, P/N: HF467-600M-40AV) in series. GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com...
  • Page 10 Set N = 3-5 to test the switching performance at different current ranges. Choose the inductance value between 50 to 200uH and use the inductor with a current rating higher than your switching test current to avoid saturation. GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com...

  • Page 11: Quick Start Procedure (Pulse Test Mode)

    External power inductor (recommend toroid inductor 50-200uH/40A) • Check the board for any visual damage and ensure jumper J3 is properly installed at “INT” position. GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 21...
  • Page 12 Then turn off the 12V power supply and signal generator output. The picture can't be displayed. Figure 11 - Example of pulse Test set up GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 21...

  • Page 13: Test Results

    0.8V which is lower than gate threshold of 1.6V at a dv/dt = 40V/ns and the turn-off negative voltage is clamped by the diode with a peak negative spike of approximately -2V. GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com...
  • Page 14 <80°C at J_MAX 1500W output. Figure 14 - Synchronous Buck Efficiency (V =400V, V =200V, D=50%, F =100kHz) GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 21...
  • Page 15 Figure 15 - Synchronous Buck switching waveforms (CCM, P =1500W) Figure 16 - Thermal image showing Q1 and Q2 temperature (P =1500W, T =80°C, T =25°C) JMAX GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 21...
  • Page 16 GS66508T-EVBHB 650V GaN E-HEMT Half Bridge Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ Appendix Schematic GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 21...
  • Page 17 GS66508T-EVBHB 650V GaN E-HEMT Half Bridge Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ PCB Layout Top layer GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 21...

  • Page 18: Bottom Layer

    GS66508T-EVBHB 650V GaN E-HEMT Half Bridge Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ Bottom Layer GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 21...

  • Page 19: Assembly Drawing (Top)

    GS66508T-EVBHB 650V GaN E-HEMT Half Bridge Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ Assembly Drawing (Top) GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 21...
  • Page 20 HEX NUT STEEL 6-32 KEYSTONE 4701 HEATSINK heatsink, push pin Customized design MALICO INC CMFA0660502900-00 DNP = Do not populate GS66508T-EVBHB UG rev. 150917 © 2015 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 21...
  • Page 21 DEVELOPMENT, DEMONSTRATION, and OR EVALUATION PURPOSES ONLY and is not considered by GaN Systems to be a finished end-product fit for general consumer use. As such, the goods being sold or provided are not intended to be complete in terms of required design-, marketing-, and/or manufacturing-related protective considerations, including but not limited to product safety and environmental measures typically found in end products that incorporate such semiconductor components or circuit boards.
  • Page 22 The information given in this document shall not in any event be regarded as a guarantee of performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights.

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