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Gan Systems GS66504B-EVBDB GaN E-HEMT User Manual

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_____________________________________________________________________________________________________________________
GS66504B-EVBDB GaN E-HEMT Daughter
Board and GS665MB-EVB Evaluation
Platform
User's Guide
Visit
www.gansystems.com
DANGER!
This evaluation kit is designed for engineering evaluation in a controlled
lab environment and should be handled by qualified personnel ONLY.
High voltage will be exposed on the board during the test and even brief
contact during operation may result in severe injury or death.
Never leave the board operating unattended. After it is de-energized,
always wait until all capacitors are discharged before touching the board.
CAUTION:
This product contains parts that are susceptible to damage by electrostatic
discharge (ESD). Always follow ESD prevention procedures when
handling the product.
GS66504B-EVBDB UG rev. 161120
for the latest version of this user's guide.
© 2016 GaN Systems Inc.
Please refer to the Evaluation Board/Kit Important Notice on page 29
GS66504B-EVBDB 650V
GaN E-HEMT Evaluation Board
www.gansystems.com
User's Guide
1

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Summary of Contents for Gan Systems GS66504B-EVBDB GaN E-HEMT

  • Page 1 GS66504B-EVBDB 650V GaN E-HEMT Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ GS66504B-EVBDB GaN E-HEMT Daughter Board and GS665MB-EVB Evaluation Platform User’s Guide Visit www.gansystems.com for the latest version of this user’s guide. DANGER! This evaluation kit is designed for engineering evaluation in a controlled lab environment and should be handled by qualified personnel ONLY.
  • Page 2 _____________________________________________________________________________________________________________________ Overview The GS665XXX-EVBDB daughter board style evaluation kit consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal mother board (P/N: GS665MB-EVB) or users’...
  • Page 3 Gate Driver VDC- Figure 1 GS665XXX-EVBDB Evaluation Board Block Diagram GS66504B-EVBDB half bridge daughter board Figure 2 GS66504B-EVBDB top side GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 4 H. 5V-9V isolated DC/DC gate drive power supply GaN E-HEMTs:  This daughter board includes two GaN Systems E-HEMT GS66504B (650V/15A, 100mΩ) in a GaNPx™ B type package. The large S pad serves as source connection and thermal pad. Figure 4 Package outline of GS66504B GS66504B-EVBDB UG rev.
  • Page 5 At high frequency operation the power dissipation for RS1/RS2 needs to be closely watched and CS1/CS2 should be sized correctly. It is recommended to start with 33-47pF and 10-20Ω. GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 6 The output of coaxial current shunt can be connected to oscilloscope via 50Ω termination impedance to reduce the ringing. The measured current is inverted and can be scaled by using: Id=Vid/Rsense. GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 7 There is no on-board over-temperature protection. Device temperature must be closely monitored during the test. Never operate the board with device temperature exceeding T (150°C) J_MAX GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 8 Figure 9 650V universal mother board GS665MB-EVB GaN Systems provides a universal 650V mother board (ordering part number: GS665MB-EVB, sold separately) that can be used as the basic evaluation platform for all the daughter boards. The universal 650V mother board evaluation kit includes following items:...
  • Page 9 RC delay circuits, R6/C12 and R5/C11. The default dead time is set to about 100ns. Additionally two potentiometers locations are provided (TR1/TR2, not included) to allow fine adjustment of the dead time if needed. GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 10 P/N: HF467-600M-40AV) in series. C14 is designed to accommodate a film capacitor as output filter. Double pulse test mode GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 11 650V for pulse testing. Exceeding this limit may cause damage to the devices. Buck/Standard half bridge mode GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 12 Totem pole bridgeless PFC CON5 Jumper setting: CON4  J4 (Q1): INT_INV CON1  J6 (Q2): INT INPUT CON6 CON7 VDC- GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 13 3. Pin 7-9: 1.91mm (75mil) mounting hole for Mill-max Receptacle P/N: 0312-0-15-15-34-27-10-0. Figure 13 Recommended footprint drawing of daughter board GS665XXX-EVBDB GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 14 After the test is complete, slowly ramp down the HV supply voltage to 0V and turn off the output. Then turn off the 12V bias supply and signal generator output. GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 15 GS66504B-EVBDB 650V GaN E-HEMT Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ Figure 14 Double pulse test setup example (GS66504B-EVBDB) GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 16 PCB alyout, enables a fast and clean turn-off Vds waveform with only 50V the turn-off Vds overshoot at dv/dt > 100V/ns. The measured rise time is 3.9ns at 400V and 15A hard turn-off。 GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 17 A T&M search coaxial current shunt (SDN-414-10, 0.1Ω) is installed for switching loss measurement as shown below. Figure 17 Eon/Eoff measurement probe connection with current shunt GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 18 Figure 19. The drain current spike is caused by charging the high side switch Coss (Qoss loss). Figure 19 Turn-on switching loss measurement (Eon=41uJ, 400V/15A) GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 19 This means that with the fast turn-off speed the GaN E-HEMT can achieve near zero turn-off switching loss. GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 20 GS66504B-EVBDB 650V GaN E-HEMT Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ Figure 21 GS66504B Switching Loss Measurement (V = 400V, T =25°C) GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 21 60°C at 750W output. J_MAX Figure 22 Synchronous Buck Efficiency and thermal measurement Figure 23 Thermal image (Pout=750W) GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 22 GS66504B-EVBDB 650V GaN E-HEMT Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ Appendix A - GS66504B-EVBDB Circuit schematics GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 23 GS66504B-EVBDB 650V GaN E-HEMT Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ Assembly Drawing (Top) Assembly Drawing (Bottom) GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 24 GaN E-HEMT Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ PCB layout Top Layer Mid Layer 1 Mid Layer 2 Bottom Layer GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 25 GS66504B-EVBDB 650V GaN E-HEMT Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ Bill of Materials GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 26 GS66504B-EVBDB 650V GaN E-HEMT Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ Appendix B - GS665MB-EVB Circuit schematics GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 27 GS66504B-EVBDB 650V GaN E-HEMT Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ Assembly drawing Assembly Top Assembly Bottom GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 28 GS66504B-EVBDB 650V GaN E-HEMT Evaluation Board User’s Guide _____________________________________________________________________________________________________________________ Bill of Materials GS66504B-EVBDB UG rev. 161120 © 2016 GaN Systems Inc. www.gansystems.com Please refer to the Evaluation Board/Kit Important Notice on page 29...
  • Page 29 The user assumes all responsibility and liability for proper and safe handling of the goods. Further, the user indemnifies GaN Systems from all claims arising from the handling or use of the goods. Due to the open construction of the product, it is the user’s responsibility to take any and all appropriate precautions with regard to electrostatic discharge.
  • Page 30 The information given in this document shall not in any event be regarded as a guarantee of performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights.
  • Page 31 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GaN Systems GS66504B-EVBDB...

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