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● Common specifications
Type
Model No.
Detecting capability
(Min. sensing object)
E f f e c t i v e a p e r t u r e
angle (EAA)
Supply voltage
<For PNP output>
• Maximum source current: 200mA
• Applied voltage: same as supply voltage
Control output
• Residual voltage: 2.5V or less
(OSSD 1 / 2)
• Leakage current: 0.1mA or less
• Maximum load capacity: 0.22µF
• Load wiring resistance: 3Ω or less
Opera ion mode
ON when all beams are received, OFF when one or more beams are interrupted (Note 1, 2)
(Output opera ion)
Protection circuit
(Short-circuit protection)
Response time
(In normal operation)
<For PNP output>
• Maximum source current: 100mA
Auxiliary output
• Applied voltage: same as supply voltage
(Non-safety output)
• Residual voltage: 2.5V or less
Opera ion mode
(Output opera ion)
Protection circuit
(Short-circuit protection)
Protection
Degree of pollution
Ambient temperature
Ambient humidity
Ambient illuminance
Operating altitude
Voltage withstandability 1,000V AC for one min. (between all supply terminals connected together and enclosure)
Insulation resistance
Vibration resistance
10 to 55Hz frequency, 0.75mm amplitude in X, Y and Z directions for two hours each
Shock resistance
SFF (Safe failure fraction)
HFT (Hardware fault tolerance)
Subsystem·Type
Mission time
Accessory
Notes: 1) The beam channel is not turned OFF during muting even if it is blocked.
2) In case the blanking function is valid, the operation mode is changed.
3) The intermediate supporting bracket (SE9Z-SED-2) is enclosed with the following devices. The quantity
of the enclosed bracket differs depending on the device as follows:
1 set: 40 to 56 beam channels
2 sets: 64 to 80 beam channels
3 sets: 88 to 96 beam channels
[for sensing range exceeding 3m(Required by IEC 61496-2, ANSI/UL 61496-2)]
24V DC ±10% Ripple P-P 10% or less
PNP open-collector transistor / NPN open-collector transistor (switching type)
(between the control output and +V)
(source current 200mA, when using 15m length cable)
(power supply OFF condi ion)
(No load to maximum output current)
(OFF when fault occurs in the sensor or the synchronization signal error, too)
OFF response: 14ms or less, ON response: 80 to 90ms
PNP open-collector transistor / NPN open-collector transistor (switching type)
(between the auxiliary output and +V)
(source current 100mA, when using 15m length cable)
When OSSDs are ON: OFF, when OSSDs are OFF: ON (factory setting)
[Changeable by using the handy controller SE9Z-HC (optional).]
-10 to +55°C (No dew condensation or icing allowed), Storage: -25 to +70°C
30 to 85% RH, Storage: 30 to 95% RH
Incandescent lamp: 3,500 ℓ x or less at the light-receiving surface
20MΩ or more with 500V DC mega
(between all supply terminals connected together and enclosure)
2
300m/s
acceleration (approx. 30G) in X, Y and Z directions for three times each
SE9Z-SED-2 (Intermediate supporting bracket): (Note 3)
20mm pitch type
SE4D-H
ø25mm opaque object
±2.5 degree or less
<For NPN output>
• Maximum sink current: 200mA
• Applied voltage: same as supply voltage
(between he control output and 0V)
• Residual voltage: 2.5V or less
(sink current 200mA, when using 15m length cable)
• Leakage current: 0.1mA or less
(power supply OFF condi ion)
• Maximum load capacity: 0.22µF
(No load to maximum output current)
• Load wiring resistance: 3Ω or less
Incorporated
<For NPN output>
• Maximum sink current: 100mA
• Applied voltage: same as supply voltage
(between the auxiliary output and 0V)
• Residual voltage: 2.5V or less
(sink current 100mA, when using 15m length cable)
Incorporated
IP65, IP67 (IEC60529)
3
2,000m or less
99%
1
Type B (IEC 61508-2)
20 years
SE9Z-TR25 (Test rod): 1
53
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