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E. FDS4685
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench
process. It has been optimized for power management applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Features
• –8.2 A, –40 V R
DS(ON)
R
DS(ON)
• Fast switching speed
• High performance trench technology for extremely lowRDS(ON)
• High power and current handling capability
26
= 0.027 Ω @ V
= –10 V
GS
= 0.035 Ω @ V
= –4.5 V
GS
Table 16: Absolute maximum ratings
Figure 11: Pins

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