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3. FDS9435A
SO-8 P-Channel enhancement mode power field effect transistors are produced using
Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer power management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients are needed.
·
Features
-5.3 A, -30 V, R
DS(ON)
R
DS(ON)
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Single P-Channel Enhancement Mode Field Effect Transistor
= 0.045 Ω @ V
GS
= 0.075 Ω @ V
GS
= -10 V,
= - 4.5 V.
20
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