Memories - Nokia NSB-5 Series Technical Documentation Manual

NSB-5
System Module
Pin Symbol
45 VBACK
46 CRA
47 CRB
48 SLCLK
49 DATACLK
50 DATASELX
51 DATA_IN/OUT
52 CCONTINT
53 TEST
54 PURX
55 VBB
56 PWMOUT
57 VBAT
58 GROUND
59 V2V
60 VCHAR
61 VCXOTEMP
62 BSI
63 BTEMP
64 EAD

Memories

The MCU program code resides in an external program memory, size is 16Mbits. MCU
work (data) memory size is 1Mbits. A special block in the flash is used for storing the sys-
tem and tuning parameters, user settings and selections, a scratch pad, and a short code
memory.
Separate EEPROM memories formerly used to store non-volatile data have been removed
and replaced by dedicated, write-protected blocks in flash memory. This flash solution
gives a cost and size benefit in products where large EEPROM sizes are required.
The BusController (BUSC) section in the MAD2WD1 decodes the chip select signals for
the external memory devices and the system logic. BUSC controls internal and external
bus drivers and multiplexers connected to the MCU data bus. The MCU address space is
divided into access areas with separate chip select signals. BUSC supports a programma-
Page 46
Table 12: CCONT 3V pin assignment
Type State in Reset
P backup battery
I
I
O
I High Z
I High Z
I/O High Z
O "0"
I GND
O "0"
O 2.8V
O "0"
P
P
O 1.975V
I
I
I
I
I
Nokia Mobile Phones Ltd.
PAMS Technical Documentation
Description
backup battery input
crystal for 32 kHz sleep clock
crystal for 32 kHz sleep clock
sleep clock output
MAD2WD1 bus clock
MAD2WD1 bus enable
MAD2WD1 bus serial data
CCONT interrupt output
test pin
(ground=>normal operation)
power up reset signal
baseband regulator output
PWM out (3/0V)
unregulated supply voltage (VBB,
V2V, ADC, 32kHz)
(VBB, V2V, ADC, 32kHz)
MAD2WD1 core regulator output
charger voltage
VCXO-temperature
battery type input
battery temperature input
external accessory detection
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