Advertisement
4
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO'S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
D
C
P3.3V
P5.0V_AUX
R538
CHP3_P1.8VEN# has integrated
D
100K
10Kohm pull-up to S5_3.3V of SB600
1%
G
CHP3_P1.8VEN#
21-B4
1
3
D
S
R528
Q510
10K
RHU002N06
G
CHP3_NBRST#
12-B3 20-C1
1
S
2
B
MEM1_VREF
A
4
COM-22C-015(1996.6.5) REV. 3
3
P1.8V_AUX VDC
P5.0V_AUX
R524
R527
R518
R526
C543
20K
10
715K
10
1nF
1%
1%
1608
50V
R525
R523
C544
C531
C545
150K
300K
1000nF
1nF
1%
1%
1000nF
6.3V
50V
R529
3
G_DDR
G_DDR
G_DDR
G_DDR
D
100K
Q517
1%
RHU002N06
G
1
3
S
2
Q511
RHU002N06
G_DDR
2
C555
10nF
R520
10
5%
C540
14-A4
17-C2
18-C2
R521
10
5%
C542
1000nF
6.3V
G_DDR
3
DDR2 POWER
P5.0V
P5.0V_AUX
NO_STUFF
R522
U501
470K
SC486IMLTRT
11
7
VTTEN
PGD
3
R517
1K
VDDQS
2
1
C532
2.2nF
TON
EN_PSV
6
FB
8
REF
9
24
R516
0
COMP
BST
10
VTTS
5
VCCA
TP1319
4
23
VSSA
DH
21
R514
10K
ILIM
15
22
VTT_1
LX
G_DDR
14
VTT_2
P1.8V_AUX
13
19
VTTIN_1
DL
12
20
VTTIN_2
VDDP
P5.0V_AUX
17
18
C539
PGND_2
PGND_1
16
25
1000nF
PGND_3
THERM
25V
C529
1000nF
25V
P0.9V
1nF
R519
0
5%
50V
C538
C541
10000nF
1nF
50V
6.3V
G_DDR
2
C548
4.7nF
D507
MBR0540
25V
1%
44-C4
37-C4
37-B1
27-C2
KBC3_SUSPWRON
50V
G_DDR
C530
100nF
D1
8
25V
G1
5
1%
R515
1K 1%
1
6
7
Q509
G2
SI4816BDY-T1-E3
4
2 3
TP1327
C537
SHORT500
INSTPAR
10000nF
6.3V
G_DDR
DRAW
DATE
TITLE
ZHOU JUN
1/23/2008
CHECK
DEV. STEP
GUO LEI
PV
APPROVAL
REV
KEVIN LEE
1.0
MODULE CODE
LAST EDIT
2
1
D
VDC
B513
EXCML16A270u
TP835
C547
C546
100nF
10000nF
25V
25V
C
P1.8V_AUX
(7A)
L501
2.2uH
IHLP-2525CZ-01
EC1
EC2
C69
330uF
330uF
100nF
2.5V
2.5V
10V
AL
AL
NO_STUFF
R768
4.7
C766
1nF
P1.8V_AUX
B
C73
C71
C72
C70
100nF
100nF
100nF
100nF
Decoupling Caps for EMI, 2006/11/23
A
SAMSUNG
XI'AN
ELECTRONICS
MAIN
PART NO.
DDR2 POWER
BA41-00859/60/61A
38
48
November 26, 2007 11:01:51 AM
PAGE
OF
1
D:/users/mentor/XiAn/ATI/PV2/XIAN_PV2_0123
Advertisement
