Appendix B - Technical Specifications - Peak Electronics DCA75 User Manual

Atlas DCA Pro User Guide
Appendix B – Summary Technical Specifications
All values are at 25°C unless otherwise specified. Specifications subject to change.
Parameter
Bipolar Transistors
Measurable current gain (h
h accuracy (h
FE FE
h test voltage (V
FE
h collector test current
FE
Base current for V
V accuracy
BE
V resolution
BE
V for Darlington identification
BE
V for Darlington (shunted types)
BE
V threshold for germanium
BE
Acceptable V
BE
Base-emitter shunt threshold
Acceptable collector leakage
Leakage current accuracy
MOSFETs/IGBTs
Enhancement mode V
Depletion mode V
V accuracy
GS(ON)
Drain current at V
Drain-Source voltage at V
Acceptable gate-source resistance
IGBT collector saturation threshold
JFETs
Pinch-off V
GS(OFF)
Pinch-off drain-source current
Turn-on V range
GS(ON)
Turn-on drain-source test current
V accuracy
GS
Transconductance (g
g test drain current span
fs
g accuracy (<20mA/V)
fs
g accuracy (>20mA/V)
fs
V for I measurement (V
DS DSS
) range
FE
<2000)
)
CEO
measurement
BE
range
GS(ON)
range
GS(ON)
GS(ON)
GS(ON)
range
) range
fs
=0)
GS
Min Typ
2
±3% ±5 h
3.0V
4.75mA 5.00mA
4.75mA 5.00mA
±1% ±0.006V
3.0mV
0.95V 1.00V
0.75V 0.80V
0.55V
50kΩ 60kΩ
±2% ±0.02mA
0.0V
-5.0V
±2% ±0.01V
4.75mA 5.00mA
3.5V
8kΩ
0.40V
-10.0V
2.5µA 5.0µA
-9.0V
4.75mA 5.00mA
±2% ±0.01V
3.0mA to 5.0mA
±5% ±2mA/V
±10% ±5mA/V
3.0V
Page 41
April 2015 – Rev 1.4
Max
32000
FE
9.0V
5.25mA
5.25mA
6.0mV
1.80V
1.80V
1.80V
70kΩ
1.5mA
10.0V
0.0V
5.25mA
9.0V
2.5V
10.0µA
2.5V
5.25mA
99mA/V
3.25V
Note
2
2,8
2
8
3
4
6
5
5
5
5
9