Mitsubishi Electric PSSxxMC1Fx Manual page 37

< Dual-In-Line Package Intelligent Power Module >
DIPIPM+ Series Application note
Influence of pattern wiring around the shunt resistor is shown below.
(1) Influence of the part-A wiring
The ground of N-side IGBT gate is V
generated by the wiring parasitic inductance will result the potential of IGBT emitter variation during switching
operation. It is necessary to locate shunt resistor as close to the N terminal as possible.
(2) Influence of the part-B wiring
The part-B wiring in Fig.3-1-12 affects SC protection level. SC protection works by detecting the voltage of the
CIN terminals. If part-B wiring is too long, extra surge voltage generated by the wiring inductance will lead to
deterioration of SC protection level. It is necessary to connect CIN and V
shunt resistor and avoid long wiring.
(3) Influence of the part-C wiring pattern
C1R2 filter is added to remove noise influence occurring on shunt resistor. Filter effect will dropdown and noise
will easily superimpose on the wiring if part-C wiring in Fig.3-1-12 is too long. It is necessary to install the C1R2
filter near CIN, V
(4) Influence of the part-D wiring pattern
Part-D wiring pattern in Fig.3-1-12 gives influence to all the items described above, maximally shorten the
GND wiring is expected.
Publication Date: September 2016
Drive circuit
P-side
IGBTs
N-side
IGBTs
Drive circuit
SC protection
Fig.3-1-12 External protection circuit
. If part-A wiring pattern in Fig.3-1-12 is too long, extra voltage
NC
terminals as close as possible.
NC
DIPIPM
P
U
External protection circuit
V
W
N
A
CIN R2
C
C1
V
D
NC
NC
37
Current path
B
Shunt resistor
N1
terminals directly to the two ends of