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UP05C8GG
Electrical Characteristics T
Tr
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
Transition frequency
*
Power gain
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
* : Pulse measurement
CCD Load Device
Parameter
Pinchi off current
Output impedance
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
UN05C8B_P
P
T
T
140
120
100
80
60
40
20
0
0
40
80
Ambient temperature T
Characteristics charts of Tr
UP05C8G_I
I
V
C
40
T
= 25°C
a
35
30
25
20
15
10
5
0
0
2
4
6
Collector-emitter voltage V
2
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C±3°C
a
Symbol
V
I
= 100 mA, I
CBO
C
V
I
= 10 mA, I
EBO
E
V
V
BE
CE
h
V
FE
CE
f
V
T
CB
PG
V
CB
Symbol
I
V
P
DS
Z
V
O
DS
-T
T
a
a
120
( °C )
a
-V
C
CE
CE
60
I
= 300 µA
V
B
CE
250 µA
50
200 µA
40
150 µA
30
100 µA
20
50 µA
10
0
8
10
12
0
( V )
CE
Conditions
= 0
E
= 0
C
= 10 V, I
= 2 mA
C
= 10 V, I
= 2 mA
C
= 10 V, I
= -15 mA, f = 200 MHz
E
= 10 V, I
= -1 mA, f = 100 MHz
E
Conditions
= 10 V, V
= 0
G
= 10 V, V
= 0
G
UP05C8G_I
-I
C
B
I
I
C
B
= 10 V
0.2
0.4
0.6
0.8
1.0
1.2
( mA )
Base current I
B
SJJ00400BED
Min
Typ
Max
Unit
30
3
720
25
250
800
1 200
MHz
20
Min
Typ
Max
Unit
3.5
5.5
0.05
MW
UP05C8G_I
-V
B
BE
I
V
B
BE
0.8
V
= 10 V
CE
T
= 25°C
a
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.1
0.2
0.3
0.4
0.5 0.6 0.7 0.8 0.9
Base-emitter voltage V
BE
V
V
mV
dB
mA
( V )
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