Panasonic MA4X193 (MA193) Specifications

Switching Diodes
MA4X193
Silicon epitaxial planar type
For switching circuit
■ Features
• Four isolated elements contained in one package
• Short reverse recovery time t
• Bridge diodes for surface mounting
• Anode common + cathode common composite product
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Repetitive peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA193)
rr
= 25°C
a
Symbol Rating
V 80
R
V 80
RRM
I 70
F(AV)
I 150
FRM
I 250
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 70 mA
V I
F F
V I
R R
I V
R R
C V
t R
= 10 mA, V
t I
rr F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
0.60
Unit
V
V
mA
mA
EIAJ: SC-61
mA
Marking Symbol: M2Z
°C
Internal Connection
°C
Conditions
= 100 µA
= 75 V
= 0 V, f = 1 MHz
= 6 V
R
= 0.1 I = 100 Ω
, R
R L
Input Pulse
t t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00047BED
+0.20
2.90
–0.05
1.9 ±0.2
(0.95) (0.95)
3 4
0.5R
2 1
(0.2)
+0.10
–0.05
+0.10
0.40
–0.05
10˚
Mini4-G1 Package
3
4
2 1
Min Typ Max
1.2
80
100
15
10
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
1: Cathode 1
Anode 2
2: Cathode 2, 3
3: Anode 3
Cathode 4
4: Anode 1, 4
Unit
V
V
nA
pF
ns
1