NXP Semiconductors SA58670A Product Data Sheet
NXP Semiconductors SA58670A Product Data Sheet

NXP Semiconductors SA58670A Product Data Sheet

2.1 w/channel stereo class-d audio amplifier

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1. General description

2. Features

3. Applications

SA58670A
2.1 W/channel stereo class-D audio amplifier
Rev. 02 — 23 October 2008
The SA58670A is a stereo, filter-free class-D audio amplifier which is available in an
HVQFN20 package with the exposed Die Attach Paddle (DAP).
The SA58670A features independent shutdown controls for each channel. The gain may
be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity
to noise and RF rectification is increased by high PSRR and differential circuit topology.
Fast start-up time and small package makes it an ideal choice for both cellular handsets
and PDAs.
The SA58670A delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into 8 . It
delivers 2.1 W/channel at 5.0 V into 4 . The maximum power efficiency is excellent at
70 % to 74 % into 4
short-circuit shutdown protection.
I
Output power:
N
2.1 W/channel into 4
N
1.4 W/channel into 8
N
720 mW/channel into 8
I
Supply voltage: 2.5 V to 5.5 V
I
Independent shutdown control for each channel
I
Selectable gain: 6 dB, 12 dB, 18 dB and 24 dB
I
High SVRR: 77 dB at 217 Hz
I
Fast start-up time: 3.5 ms
I
Low supply current
I
Low shutdown current
I
Short-circuit and thermal protection
I
Space savings with 4 mm
I
Low junction to ambient thermal resistance of 24 K/W with exposed DAP
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Wireless and cellular handset and PDA
I
Portable DVD player
I
USB speaker
I
Notebook PC
I
Portable radio and gaming
and 84 % to 88 % into 8 . The SA58670A provides thermal and
at 5.0 V
at 5.0 V
at 3.6 V
4 mm HVQFN20 package
Product data sheet

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Summary of Contents for NXP Semiconductors SA58670A

  • Page 1: General Description

    Fast start-up time and small package makes it an ideal choice for both cellular handsets and PDAs. The SA58670A delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into 8 . It delivers 2.1 W/channel at 5.0 V into 4 . The maximum power efficiency is excellent at 70 % to 74 % into 4 short-circuit shutdown protection.
  • Page 2: Ordering Information

    NXP Semiconductors Educational toy 4. Ordering information Table 1. Type number Package SA58670ABS 5. Block diagram right input left input Fig 1. SA58670A_2 Product data sheet Ordering information Name Description HVQFN20 plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4...
  • Page 3: Pinning Information

    NXP Semiconductors 6. Pinning information 6.1 Pinning (1) Exposed Die Attach Paddle (DAP). Fig 2. 6.2 Pin description Table 2. Symbol OUTLP PVDD PGND OUTLN n.c. AVDD n.c. OUTRN PGND PVDD OUTRP INRP INRN AGND SA58670A_2 Product data sheet terminal 1...
  • Page 4: Limiting Values

    NXP Semiconductors Table 2. Symbol INLN INLP 7. Limiting values Table 3. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol GND is the voltage ground on pins PGND and pin AGND. SA58670A_2 Product data sheet Pin description …continued...
  • Page 5: Static Characteristics

    NXP Semiconductors 8. Static characteristics Table 4. Static characteristics = 25 C; unless otherwise specified Symbol Parameter supply voltage supply current shutdown mode supply current DD(sd) PSRR power supply rejection ratio common-mode input voltage i(cm) CMRR common mode rejection ratio...
  • Page 6: Dynamic Characteristics

    NXP Semiconductors 9. Dynamic characteristics Table 5. Dynamic characteristics = 25 C; R = 8 ; unless otherwise specified Symbol Parameter output power THD+N total harmonic distortion-plus-noise SVRR supply voltage ripple rejection CMRR common mode rejection ratio input impedance delay time from...
  • Page 7: Typical Performance Curves

    NXP Semiconductors 10. Typical performance curves THD+N a. G THD+N b. G (1) V (2) V (3) V Fig 3. SA58670A_2 Product data sheet = 24 dB v(cl) = 6 dB. v(cl) = 1 kHz. = 2.5 V. = 3.6 V.
  • Page 8 NXP Semiconductors THD+N a. G THD+N b. G (1) V (2) V (3) V Fig 4. SA58670A_2 Product data sheet = 24 dB. v(cl) = 6 dB. v(cl) = 1 kHz. = 2.5 V. = 3.6 V. = 5.0 V.
  • Page 9 NXP Semiconductors THD+N (1) P (2) P (3) P a. R THD+N (1) P (2) P (3) P b. R Fig 5. SA58670A_2 Product data sheet = 350 mW; V = 590 mV (RMS). = 240 mW; V = 490 mV (RMS).
  • Page 10 NXP Semiconductors THD+N (1) P (2) P (3) P a. R THD+N (1) P (2) P (3) P b. R Fig 6. SA58670A_2 Product data sheet = 825 mW; V = 908.3 mV (RMS). = 550 mW; V = 741.6 mV (RMS).
  • Page 11 NXP Semiconductors THD+N (1) P (2) P (3) P a. R THD+N (1) P (2) P (3) P b. R Fig 7. SA58670A_2 Product data sheet = 1.65 W; V = 1.285 V (RMS). = 1.1 W; V = 1.05 V (RMS).
  • Page 12 NXP Semiconductors (dB) (1) V (2) V (3) V (4) V Fig 8. (1) Left channel. (2) Right channel. Fig 9. SA58670A_2 Product data sheet = 3.6 V; L channel to R channel. = 3.6 V; R channel to L channel.
  • Page 13 NXP Semiconductors (dB) a. R (dB) b. R (1) V (2) V (3) V Fig 10. Crosstalk (one-to-one) as a function of frequency SA58670A_2 Product data sheet = 2.5 V. = 3.6 V. = 5.0 V. Rev. 02 — 23 October 2008 SA58670A 2.1 W/channel stereo class-D audio amplifier...
  • Page 14 NXP Semiconductors 3.6 V 2.5 V Fig 11. Supply voltage as a function of shutdown voltage 1600 (mA) 1200 a. R (1) V = 2.5 V. (2) V = 3.6 V. (3) V = 5.0 V. Fig 13. Supply current as a function of output power...
  • Page 15 NXP Semiconductors a. R (1) V = 5.0 V. (2) V = 3.6 V. (3) V = 2.5 V. Fig 14. Power dissipation as a function of output power a. R (1) V = 5.0 V. (2) V = 3.6 V.
  • Page 16: Application Information

    Equivalent Series Resistance (ESR) capacitor of typically 1 F is placed as close as possible to the PVDD pins of the SA58670A. It is important to place the decoupling capacitor at the supply voltage pins of the SA58670A because any resistance or inductance in the PCB trace between the SA58670A and the capacitor can cause a loss in efficiency.
  • Page 17: Pcb Layout Considerations

    SA58670A. Placing decoupling capacitors directly at the power supply voltage pins increases efficiency because the resistance and inductance in the trace between the SA58670A power supply voltage pins and the decoupling capacitor causes a loss in power efficiency.
  • Page 18: Efficiency And Thermal Considerations

    The maximum ambient temperature is 114 C at maximum power dissipation for 5 V supply and 4 thermal protection circuitry turns the SA58670A off; this prevents damage to IC. Using speakers greater than 4 reducing the output load current and increasing amplifier efficiency.
  • Page 19: Package Outline

    NXP Semiconductors 13. Package outline HVQFN20: plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 x 4 x 0.85 mm terminal 1 index area terminal 1 index area DIMENSIONS (mm are the original dimensions) UNIT max.
  • Page 20: Soldering Of Smd Packages

    NXP Semiconductors 14. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description” . 14.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits.
  • Page 21: Reflow Soldering

    NXP Semiconductors 14.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board •...
  • Page 22: Abbreviations

    NXP Semiconductors Fig 19. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description” . 15. Abbreviations Table 9. Acronym 16. Revision history Table 10. Revision history...
  • Page 23: Legal Information

    For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
  • Page 24: Table Of Contents

    NXP Semiconductors 19. Contents General description ..... . 1 Features ....... 1 Applications .

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