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NXP Semiconductors TDA8932B Product Data Sheet

Class-d audio amplifier
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1. General description

2. Features

3. Applications

TDA8932B
Class-D audio amplifier
Rev. 03 — 21 June 2007
The TDA8932B is a high efficiency class-D amplifier with low power dissipation.
The continuous time output power is 2
or 1
30 W in mono full-bridge application (R
the device can be used without any external heat sink when playing music. Due to the
implementation of thermal foldback, even for high supply voltages and/or lower load
impedances, the device remains operating with considerable music output power without
the need for an external heat sink.
The device has two full-differential inputs driving two independent outputs. It can be used
as mono full-bridge configuration (BTL) or as stereo half-bridge configuration (SE).
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Operating voltage from 10 V to 36 V asymmetrical or 5 V to 18 V symmetrical
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Mono-bridged tied load (full-bridge) or stereo single-ended (half-bridge) application
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Application without heatsink using thermally enhanced small outline package
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High efficiency and low-power dissipation
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Thermally protected and thermal foldback
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Current limiting to avoid audio holes
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Full short-circuit proof across load and to supply lines (using advanced current
protection)
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Switchable internal or external oscillator (master-slave setting)
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No pop noise
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Full-differential inputs
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Flat panel television sets
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Flat panel monitor sets
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Multimedia systems
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Wireless speakers
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Mini and micro systems
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Home sound sets
15 W in stereo half-bridge application (R
= 8 ). Due to the low power dissipation
L
Product data sheet
= 4 )
L

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  Summary of Contents for NXP Semiconductors TDA8932B

  • Page 1: General Description

    Class-D audio amplifier Rev. 03 — 21 June 2007 1. General description The TDA8932B is a high efficiency class-D amplifier with low power dissipation. The continuous time output power is 2 or 1 30 W in mono full-bridge application (R the device can be used without any external heat sink when playing music.
  • Page 2: Quick Reference Data

    NXP Semiconductors 4. Quick reference data Table 1. = 22 V; f Symbol Parameter Supplies q(tot) Stereo SE channel; R o(RMS) Mono BTL; R o(RMS) Output power is measured indirectly; based on R Two layer application board (55 mm convection.
  • Page 3: Block Diagram

    NXP Semiconductors 6. Block diagram OSCREF OSCILLATOR IN1P IN1N INREF IN2P IN2N PROTECTIONS: OVP, OCP, OTP, DIAG CGND POWERUP ENGAGE TEST Fig 1. Block diagram TDA8932B_3 Product data sheet OSCIO MODULATOR MANAGER MODULATOR UVP, TF, WP MODE TDA8932B 1, 16, 17, 32 SSD(HW) Rev.
  • Page 4: Pinning Information

    NXP Semiconductors 7. Pinning information 7.1 Pinning SSD(HW) IN1P IN1N DIAG ENGAGE POWERUP CGND TDA8932BT OSCREF HVPREF INREF TEST IN2N IN2P SSD(HW) 001aaf598 Fig 2. Pin configuration SO32 7.2 Pin description Table 3. Symbol SSD(HW) IN1P IN1N DIAG ENGAGE POWERUP...
  • Page 5: Functional Description

    8. Functional description 8.1 General The TDA8932B is a mono full-bridge or stereo half-bridge audio power amplifier using class-D technology. The audio input signal is converted into a Pulse Width Modulated (PWM) signal via an analog input stage and PWM modulator. To enable the output power...
  • Page 6: Mode Selection And Interfacing

    NXP Semiconductors 8.2 Mode selection and interfacing The TDA8932B can be switched in three operating modes using pins POWERUP and ENGAGE: • Sleep mode: with low supply current. • Mute mode: the amplifiers are switching idle (50 % duty cycle), but the audio signal at the output is suppressed by disabling the Vl-converter input stages.
  • Page 7: Pulse Width Modulation Frequency

    320 kHz (see If two or more TDA8932B devices are used in the same audio application, it is recommended to synchronize the switching frequency of all devices. This can be realized by connecting all pins OSCIO together and configure one of the TDA8932B in the...
  • Page 8: Protection

    The reaction of the device to the different fault conditions differs per protection. TDA8932B_3 Product data sheet Rosc (kHz) summarizes how to configure the TDA8932B in master or slave configuration. Section 14.6 “Device Master or slave configuration OSCREF Rosc > 25 k to V SSD(HW) Rosc = 0 ;...
  • Page 9: Thermal Foldback (Tf)

    NXP Semiconductors 8.4.1 Thermal Foldback (TF) If the junction temperature of the TDA8932B exceeds the threshold level (T gain of the amplifier is decreased gradually to a level where the combination of dissipation (P) and the thermal resistance from junction to ambient [R temperature around the threshold level.
  • Page 10: Supply Voltage Protection

    TDA8932B is protected against any overstress. 2. If a supply voltage > 40 V is caused by other or external causes, then the TDA8932B will shut down, but the device can still be damaged since the supply voltage will remain >...
  • Page 11: Diagnostic Input And Output

    NXP Semiconductors 8.5 Diagnostic input and output Whenever a protection is triggered, except for TF, pin DIAG is activated to LOW level (see Table 6). An internal reference supply will pull-up the open-drain DIAG output to approximately 2.4 V. This internal reference supply can deliver approximately 50 A.
  • Page 12: Internal Circuitry

    NXP Semiconductors • Pins HVP1 and HVP2: The time required for charging the SE capacitor depends on its value. The half supply voltage output is disabled when the TDA8932B is used in a symmetrical supply application. • Pin HVPREF: This output voltage reference buffer charges the capacitor on pin HVPREF.
  • Page 13 NXP Semiconductors Table 7. TDA8932B_3 Product data sheet Internal circuitry (Continued) Symbol Equivalent circuit ENGAGE POWERUP CGND Rev. 03— 21 June 2007 TDA8932B Class-D audio amplifier 2.8 V I ref = 50 A 20 % 100 k 20 % CGND...
  • Page 14 NXP Semiconductors Table 7. TDA8932B_3 Product data sheet Internal circuitry (Continued) Symbol Equivalent circuit OSCREF HVPREF TEST DREF Rev. 03— 21 June 2007 TDA8932B Class-D audio amplifier 001aad791 001aad792 001aaf604 001aad795 001aag025 © NXP B.V. 21 June 2007. All rights reserved.
  • Page 15 NXP Semiconductors Table 7. TDA8932B_3 Product data sheet Internal circuitry (Continued) Symbol Equivalent circuit HVP2 HVP1 DDP2 SSP2 SSP1 DDP1 BOOT2 BOOT1 OUT2 OUT1 STAB2 STAB1 OSCIO Rev. 03— 21 June 2007 TDA8932B Class-D audio amplifier 19, 30 001aag026 20, 29...
  • Page 16: Limiting Values

    NXP Semiconductors 10. Limiting values Table 8. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Measured with respect to pin INREF; V Measured with respect to pin V Measured with respect to pin CGND; V Current limiting concept.
  • Page 17: Static Characteristics

    NXP Semiconductors Table 9. Thermal characteristics (Continued) Symbol Parameter HTSSOP32 package thermal resistance from junction th(j-a) to ambient thermal characterization j-lead parameter from junction to lead thermal characterization j-top parameter from junction to top thermal resistance from junction th(j-c) to case Measured on a JEDEC high K-factor test board (standard EIA/JESD 51-7) in free air with natural convection.
  • Page 18 NXP Semiconductors Table 10. Static characteristics (Continued) = 22 V; f = 320 kHz; T = 25 C; unless otherwise specified. Symbol Parameter Diagnostic output: pin DIAG output voltage Bias voltage for inputs: pin INREF bias output voltage O(bias) Half supply voltage...
  • Page 19: Dynamic Characteristics

    NXP Semiconductors Table 10. Static characteristics (Continued) = 22 V; f = 320 kHz; T = 25 C; unless otherwise specified. Symbol Parameter thermal foldback activation act(th_fold) temperature Oscillator reference; pin OSCIO HIGH-level input voltage LOW-level input voltage HIGH-level output voltage...
  • Page 20 NXP Semiconductors Table 12. SE characteristics (Continued) = 22 V; R 4 ; f = 1 kHz; f Symbol Parameter CMRR common mode rejection ratio output power efficiency RMS output power o(RMS) is the series resistance of inductor and capacitor of low-pass LC filter in the application.
  • Page 21 NXP Semiconductors Table 13. BTL characteristics (Continued) = 22 V; R = 8 ; f = 1 kHz; f Symbol Parameter noise output voltage n(o) mute output voltage O(mute) CMRR common mode rejection ratio output power efficiency RMS output power o(RMS) is the series resistance of inductor and capacitor of low-pass LC filter in the application.
  • Page 22: Application Information

    NXP Semiconductors 14. Application information 14.1 Output power estimation The output power P configuration can be estimated using SE configuration: o 0.5% BTL configuration: o 0.5% Where: = supply voltage V = load impedance ( ) DSon = series resistance output inductor ( w(min) = oscillator frequency (Hz);...
  • Page 23 NXP Semiconductors a. THD+N = 0.5 % Fig 8. SE output power as a function of supply voltage a. THD+N = 0.5 % Fig 9. BTL output power as a function of supply voltage TDA8932B_3 Product data sheet 001aad768 b. THD+N = 10 % 001aad770 b.
  • Page 24: Output Current Limiting

    NXP Semiconductors 14.2 Output current limiting The peak output current I normal operation the output current should not exceed this threshold level of 4 A otherwise the output signal is distorted. The peak output current in SE or BTL configurations can be estimated using SE configuration:...
  • Page 25: Gain Reduction

    Impedance ( ) 14.5 Gain reduction The gain of the TDA8932B is internally fixed at 30 dB for SE (or 36 dB for BTL). The gain can be reduced by a resistive voltage divider at the input (see Fig 10. Input configuration for reducing gain...
  • Page 26: Device Synchronization

    G 14.6 Device synchronization If two or more TDA8932B devices are used in one application it is recommended that all devices are synchronized running at the same switching frequency to avoid beat tones. Synchronization can be realized by connecting all OSCIO pins together and configure one of the TDA8932B devices as master, while the other TDA8932B devices are configured as...
  • Page 27: Pumping Effects

    – Where: th(j-a) j(max) P = power dissipation which is determined by the efficiency of the TDA8932B The power dissipation is shown in The thermal foldback will limit the maximum junction temperature to 140 C. 14.8 Pumping effects When the amplifier is used in a SE configuration, a so-called 'pumping effect' can occur.
  • Page 28 NXP Semiconductors Fig 12. SE application for reducing pumping effects TDA8932B_3 Product data sheet IN1P audio IN1N IN2N audio IN2P Rev. 03— 21 June 2007 TDA8932B Class-D audio amplifier OUT1 OUT2 001aad763 © NXP B.V. 21 June 2007. All rights reserved.
  • Page 29: Se Curves Measured In Reference Design

    NXP Semiconductors 14.9 SE curves measured in reference design THD+N a. V = 22 V; R (1) f = 6 kHz (2) f = 100 Hz (3) f = 1 kHz Fig 13. Total harmonic distortion-plus-noise as a function of output power per channel THD+N a.
  • Page 30 NXP Semiconductors (dB) = 100 mV (RMS); R = 0 ; Cse = 1000 F (1) V = 30 V; R (2) V = 22 V; R Fig 15. Gain as a function of frequency (dB) = 0 ; 20 kHz brick-wall filter AES17 (1) V = 22 V;...
  • Page 31 NXP Semiconductors (W/channel) = 1 kHz (short time P ); dashed line will require heat sink for continuous time output power (1) R 4 ; THD+N = 10 % (2) R 4 ; THD+N = 0.5 % (3) R 8 ; THD+N = 10 % (4) R 8 ;...
  • Page 32 NXP Semiconductors (W/channel) a. R 4 ; f = 1 kHz; 2 layer SO32 application board (55 mm 45 mm) without heat sink (1) V = 22 V (2) V = 26 V (3) V = 29 V Fig 23. Output power per channel as a function of time sleep = 100 mV (RMS value);...
  • Page 33: Btl Curves Measured In Reference Design

    NXP Semiconductors 14.10 BTL curves measured in reference design THD+N a. V = 12 V; R (1) f = 6 kHz (2) f = 1 kHz (3) f = 100 Hz Fig 26. Total harmonic distortion-plus-noise as a function of output power THD+N a.
  • Page 34 NXP Semiconductors (dB) = 100 mV (RMS); R (1) V = 12 V; R (2) V = 22 V; R Fig 28. Gain as a function of frequency (dB) = 0 ; 20 kHz brick-wall filter AES17 (1) R = 4 ; V...
  • Page 35 NXP Semiconductors a. R = 4 ; f = 1 kHz; 2 layer SO32 application board (55 mm 45 mm) without heat sink (1) V = 12 V (2) V = 13.5 V (3) V = 15 V Fig 32. Output power as a function of time = 1 kHz;...
  • Page 36 NXP Semiconductors = 1 kHz; power dissipation in junction only; short time P continuous time output power (1) R (2) R Fig 35. Power dissipation as a function of supply voltage TDA8932B_3 Product data sheet at THD+N = 10 %; dashed line will require heat sink for Rev.
  • Page 37: Typical Application Schematics (Simplified)

    NXP Semiconductors 14.11 Typical application schematics (simplified) Rvdda 470 nF MUTE control 470 nF SLEEP control Cosc 100 nF Rosc 39 k Chvpref Chvp 47 F (25 V) 100 nF 470 nF Fig 36. Typical simplified application diagram for 2...
  • Page 38 NXP Semiconductors Rvdda MUTE control 470 nF SLEEP control Cosc 100 nF Rosc 39 k Chvp 100 nF Fig 37. Typical simplified application diagram for 1 TDA8932B_3 Product data sheet Cvdda Cvddp 100 nF 220 F (35 V) SSD(HW) SSD(HW)
  • Page 39 NXP Semiconductors Rvdda Rvssa 470 nF MUTE control 470 nF SLEEP control Cosc 100 nF Rosc VSSA 39 k 470 nF Fig 38. Typical simplified application diagram for 2 TDA8932B_3 Product data sheet VDDA Cvddp Cvdda 220 F 100 nF...
  • Page 40: Test Information

    NXP Semiconductors Rvdda Rvssa MUTE control SLEEP control Cosc 100 nF Rosc VSSA 39 k Fig 39. Typical simplified application diagram for 1 15. Test information 15.1 Quality information The General Quality Specification for Integrated Circuits, SNW-FQ-611 is applicable. TDA8932B_3...
  • Page 41: Package Outline

    NXP Semiconductors 16. Package outline SO32: plastic small outline package; 32 leads; body width 7.5 mm pin 1 index DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT max. 2.45 2.65 0.25 2.25 0.012 0.096 inches 0.01 0.004 0.089...
  • Page 42 NXP Semiconductors HTSSOP32: plastic thermal enhanced thin shrink small outline package; 32 leads; body width 6.1 mm; lead pitch 0.65 mm; exposed die pad exposed die pad side pin 1 index DIMENSIONS (mm are the original dimensions). UNIT max. 0.15 0.95...
  • Page 43: Soldering

    NXP Semiconductors 17. Soldering This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description” . 17.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits.
  • Page 44: Reflow Soldering

    NXP Semiconductors 17.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board •...
  • Page 45: Abbreviations

    NXP Semiconductors Fig 42. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description” . 18. Abbreviations Table 18. Acronym DMOS TDA8932B_3 Product data sheet maximum peak temperature...
  • Page 46: Revision History

    NXP Semiconductors 19. Revision history Table 19. Revision history Document ID Release date TDA8932B_3 20070621 • Modifications: Status upgraded to Product data sheet TDA8932B_2 20070329 TDA8932B_1 20070214 TDA8932B_3 Product data sheet Data sheet status Change notice Product data sheet Preliminary data sheet Objective data sheet Rev.
  • Page 47: Legal Information

    For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
  • Page 48: Table Of Contents

    NXP Semiconductors 22. Contents General description ..... . 1 Features ....... 1 Applications .