Download Print this page
NXP Semiconductors BGM1012 Datasheet
NXP Semiconductors BGM1012 Datasheet

NXP Semiconductors BGM1012 Datasheet

Mmic wideband amplifier

Advertisement

Quick Links

DATA SHEET
dbook, halfpage
BGM1012
MMIC wideband amplifier
Product specification
Supersedes data of 2002 May 16
DISCRETE SEMICONDUCTORS
MBD128
2002 Sep 06

Advertisement

loading
Need help?

Need help?

Do you have a question about the BGM1012 and is the answer not in the manual?

Questions and answers

Summary of Contents for NXP Semiconductors BGM1012

  • Page 1 DATA SHEET dbook, halfpage BGM1012 MMIC wideband amplifier Product specification Supersedes data of 2002 May 16 DISCRETE SEMICONDUCTORS MBD128 2002 Sep 06...
  • Page 2 = 1 GHz CAUTION Product specification DESCRIPTION 2, 5 GND2 RF out GND1 RF in Top view MAM455 Marking code: C2-. Fig.1 Simplified outline (SOT363) and symbol. TYP. 14.6 20.1 BGM1012 2, 5 MAX. UNIT    ...
  • Page 3 2002 Sep 06 CONDITIONS RF input AC coupled  90 C CONDITIONS  90 C = 200 mW; T Product specification BGM1012 MIN. MAX. UNIT    65 C +150 ...
  • Page 4 1 dB gain compression; f = 1 GHz at 1 dB gain compression; f = 2.2 GHz f = 1 GHz f = 2.2 GHz f = 1 GHz f = 2.2 GHz Product specification BGM1012 MIN. TYP. MAX. UNIT 14.6 19.5 20.1...
  • Page 5: Application Information

    MMIC wideband amplifier APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGM1012 MMIC. The device is internally matched to 50 , and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz.
  • Page 6 +0.5 +0.2 100 MHz 4 GHz −0.2 −0.5 −135° −1 −90° = 50  Fig.8 Output reflection coefficient (s Product specification 45° 0° −5 −2 −45° MLD910 ); typical values. 45° 0° −5 −2 −45° MLD911 ); typical values. BGM1012...
  • Page 7 ) as a function of frequency; typical values. −10 −20 −40 −30 −20 = 50  = 3.3 V. = 3 V. = 2.7 V. 2.2 GHz; typical values. Product specification BGM1012 MLD913 3000 4000 f (MHz) MLD915 −10 P D (dBm)
  • Page 8 2000 3000 f (MHz) Fig.14 Stability factor as a function of frequency; 1000 2000 = 30 dBm; Z = 50  = 14.6 mA; V = 3 V; P typical values. Product specification BGM1012 MLD917 3000 4000 f (MHz)
  • Page 9 Scattering parameters = 30 dBm; Z = 50 ; T = 3 V; I = 14.6 mA; P f (MHz) MAGNITUDE ANGLE MAGNITUDE (ratio) (deg) 0.25122 14.607 0.27070 2.759 7.969 0.27979 14.78 0.28323 20.13 0.28557 24.14 1000 0.28673 27.57 1200 0.28517 29.93 1400...
  • Page 10: Package Outline

    DIMENSIONS (mm are the original dimensions) UNIT 0.30 0.25 0.20 0.10 OUTLINE VERSION SOT363 2002 Sep 06 scale 1.35 0.65 1.15 REFERENCES JEDEC JEITA SC-88 detail X 2 mm 0.45 0.25 0.15 0.15 EUROPEAN PROJECTION Product specification BGM1012 SOT363 ISSUE DATE 04-11-08 06-03-16...
  • Page 11 Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Product specification BGM1012 DEFINITION...
  • Page 12 (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Product specification BGM1012...
  • Page 13 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers.