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9.24. FLASH 8MBit
9.24.1. Description
The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V V
supply. For Program and Erase operations the necessary high voltages are generated internally. The
device can also be programmed in standard programmers.
The array matrix organization allows each block to be erased and reprogrammed without affecting other
blocks. Blocks can be protected against programming and erase on programming equipment, and
temporarily unprotected to make changes in the application. Each block can be programmed and
erased over 100,000 cycles.
Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status,
Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of
commands to a Command Interface using standard microprocessor write timings.
9.24.2. Features
• 2.7V to 3.6V Supply Voltage for Program, Erase and Read Operations
• Access Time: 80ns
• Programming Time: 10µs typical
• Program/Erase Controller (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
• Security Protection Memory Area
• Instruction Address Coding: 3 Digits
• Memory Blocks
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
• Block, Multi-Block and Chip Erase
• Multi Block Protection/Temporary Unprotection Modes
• Erase Suspend and Resume Modes
– Read and Program another Block during Erase Suspend
• Low Power Consumption
– Stand-by and Automatic Stand-by
• 100,000 Program/Erase Cycles per Block
• 20 Years Data Retention
– Defectivity below 1ppm/year
• Electronic Signature
– Manufacturer Code: 20h
– Top Device Code, M29W800AT: D7h
– Bottom Device Code, M29W800AB: 5Bh
Plasma TV Service Manual
32
CC
11/01/2005
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