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• Multi-region, non-linear scaling
• Hardware 2-wire serial bus support
9.21.3. Applications
• Multimedia Displays
• Plasma Displays
• Digital Television
9.22. SIL151B
9.22.1. General Description
The SiI 151B receiver uses Panel Link Digital technology to support high-resolution displays up to
SXGA (25-112MHz). This receiver supports up to true colour panels (24 bit/pixel, 16M colours) with
both one and two pixels per clock.
All Panel Link products are designed on a scaleable CMOS architecture, ensuring support for future
performance enhancements while maintaining the same logical interface. System designers can be
assured that the interface will be stable through a number of technology and performance generations.
Panel Link Digital technology simplifies PC and display interface design by resolving many of the
system level issues associated with high-speed mixed signal design, providing the system designer
with a digital interface solution that is quicker to market and lower in cost.
9.22.2. Features
• Low Power Operation: 201mA max. current consumption at 3.3V core operation
• Time staggered data output for reduced ground bounce and lower EMI
• Sync Detect feature for Plug & Display iMHot Plugginglo
• Cable Distance Support: over 5m with twisted-pair, fiber-optics ready
• Compliant with DVI 1.0 (DVI is backwards compatible with VESA
• HSYNC de-jitter circuitry enables stable operation even when HSYNC contains jitter
• Low power standby mode
• Automatic entry into standby mode with clock detect circuitry
• Standard and Pb-free packages
9.23. SDRAM 4M x 16 (MT48LC4M16A2TG-75)
9.23.1. General Description
The Micron ® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing
67,108,864 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all
signals are registered on the positive edge of the clock signal, CLK). Each of the x4's 16,777,216-bit
banks is organized as 4,096 rows by 1,024 columns by 4 bits. Each of the x8's 16,777,216-bit banks is
organized as 4,096 rows by 512 columns by 8 bits. Each of the x16's 16,777,216- bit banks is
organized as 4,096 rows by 256 columns by 16 bits.
Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and
continue for a programmed number of locations in a programmed sequence. Accesses begin with the
registration of an ACTIVE command, which is then followed by a READ or WRITE command. The
address bits registered coincident with the ACTIVE command are used to select the bank and row to be
accessed (BA0, BA1 select the bank; A0-A11 select the row). The address bits registered coincident
with the READ or WRITE command are used to select the starting column location for the burst access.
The SDRAM provides for programmable READ or WRITE burst lengths of 1, 2, 4, or 8 locations, or the
full page, with a burst terminate option. An auto precharge function may be enabled to provide a self-
timed row precharge that is initiated at the end of the burst sequence.
The 64Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation. This
architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column
address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging
one bank while accessing one of the other three banks will hide the precharge cycles and provide
seamless, high-speed, random-access operation.
The 64Mb SDRAM is designed to operate in 3.3V memory systems. An auto refresh mode is provided,
along with a power-saving, power-down mode. All inputs and outputs are LVTTL-compatible.
Plasma TV Service Manual
P&D
®
29
and DFP)
TM
11/01/2005
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