Samsung P560 Service Manual page 274

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- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
6. Material List
Location
SEC CODE
R404
2007-007642
R504
2007-007642
R527
2007-007642
SUB MATERIAL
BA99-07565A ASSY SUB/MATERIAL-NP_SMT
0.6 SMT
0202-001499
SOLDER CREAM
0202-001461
METAL MASK SOLVENT
0204-000199
ABLE BOND
0201-001002
PART ADHESIVE
0201-000160
SOLDER CREAM
0202-001520
ART PAPER
BA68-40012N LABEL-LOCATION
MICOM LABEL
BA68-40012N LABEL-LOCATION
SMT LABEL
BA68-40012N LABEL-LOCATION
EC22
2402-001168
EC7
2402-001168
Q21
0505-001352
Q22
0505-001352
Q1
0505-002169
Q7
0505-002169
Q40
0505-001049
Q52
0505-001049
Q61
0505-001049
C166
2203-002720
C178
2203-002720
C307
2203-002720
C308
2203-002720
C321
2203-002720
C325
2203-002720
C410
2203-002720
C413
2203-002720
C417
2203-002720
C425
2203-002720
C426
2203-002720
C427
2203-002720
C428
2203-002720
C46
2203-002720
C482
2203-002720
C514
2203-002720
C81
2203-002720
C303
2203-000330
C304
2203-000330
C305
2203-000330
C111
2203-006474
C112
2203-006474
C113
2203-006474
C114
2203-006474
C116
2203-006474
C117
2203-006474
C118
2203-006474
C119
2203-006474
C148
2203-006474
C149
2203-006474
Main System
NAME
R-CHIP
R-CHIP
R-CHIP
SOLDER-WIRE FLUX
SOLDER-CREAM
SOLVENT
ADHESIVE-TS
ADHESIVE-TS
SOLDER-CREAM
C-POLYMER AL CHIP
C-POLYMER AL CHIP
FET-SILICON
FET-SILICON
FET-SILICON
FET-SILICON
FET-GAAS
FET-GAAS
FET-GAAS
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
C-CER,CHIP
6-88
Description
12.1ohm,1%,1/16W,TP,1005
12.1ohm,1%,1/16W,TP,1005
12.1ohm,1%,1/16W,TP,1005
N/P,SMT SUB/MATERIAL,RIBBON,SOLVENT,BOND,-
SR34 SUPER LFM-48,-,D0.6,96.5Sn/3Ag/0.5Cu,Flux_3.5%
NP303-LD155-GQ,-,D38~10UM,96.5SN/3AG/0.5CU,FLUX
SUPANUKE-20,I.P.A,98%,-
8380,SIL,9000CPS,10cc
D520,NTR,-
LFM-48X TM-HP,-,D25-45um,96.5Sn/3Ag/0.5Cu,Flux 12.0%
NOTE PC,-,ART PAPER,-,W6.2,L6.2MM,-,-,-,-
NOTE PC,-,ART PAPER,-,W6.2,L6.2MM,-,-,-,-
NOTE PC,-,ART PAPER,-,W6.2,L6.2MM,-,-,-,-
330uF,20%,2.5V,WT,TP,7.3*4.3*1.8mm,-
330uF,20%,2.5V,WT,TP,7.3*4.3*1.8mm,-
Si4894BDY,N,30V,8.9A,0.011ohm,1.4W,SO-8
Si4894BDY,N,30V,8.9A,0.011ohm,1.4W,SO-8
Si4435BDY-T1-E3,P,-30V,-9.1A,0.035ohm,2.5W,SO-8
Si4435BDY-T1-E3,P,-30V,-9.1A,0.035ohm,2.5W,SO-8
BSS84,-50V,20V,-130mA,360mW,SOT-23,TP
BSS84,-50V,20V,-130mA,360mW,SOT-23,TP
BSS84,-50V,20V,-130mA,360mW,SOT-23,TP
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
10nF,10%,25V,X7R,1005
0.012nF,5%,50V,C0G,1005
0.012nF,5%,50V,C0G,1005
0.012nF,5%,50V,C0G,1005
22000nF,20%,6.3V,X5R,2012
22000nF,20%,6.3V,X5R,2012
22000nF,20%,6.3V,X5R,2012
22000nF,20%,6.3V,X5R,2012
22000nF,20%,6.3V,X5R,2012
22000nF,20%,6.3V,X5R,2012
22000nF,20%,6.3V,X5R,2012
22000nF,20%,6.3V,X5R,2012
22000nF,20%,6.3V,X5R,2012
22000nF,20%,6.3V,X5R,2012
Qt'y
SA/SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
4
SNA
0.001
SNA
0.001
SNA
0.001
SNA
4
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SNA
1
SA
1
SA
1
SA
1
SA
1
SA
1
SA
1
SA
1
SA
1
SA
1
SA

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