Toshiba GR-200 Series Instruction Manual page 1032

Technical data (2/3)
Binary Input circuit
Input circuit DC voltage
Capacitive discharge immunity
Maximum permitted voltage
Power consumption
Binary Outputs (BOs)
Normal type contacts
Make and carry
Break
Operating time
Fail for alarm contacts
Make and carry
Break
Operating time
Durability
Measuring input capability
Full scale
Three-phase current input
Zero-phase sequence current input
Zero-phase sequence current input for SEF
Voltage input
Sampling rate
220Vdc rated: 154Vdc (Typ.) / 110Vdc (Min. operation)
125Vdc rated: 87.5Vdc (Typ.) / 62.5Vdc (Min. operation)
110Vdc rated: 77Vdc (Typ.) /70Vdc (Min. operation)
55Vdc rated: 38.5Vdc (Typ.) / 27.5Vdc (Min. operation)
Note: A pick-up setting is available among 110V, 125V, and
220V for all binary input circuits (BIs).
Additionally, 55V setting is available for BI1 and BI2
circuits, but only for those BI circuits at IO#1 slot.
(*)The binary input circuit (BI) is used to only DC voltage
application.
10μF charged to maximum supply voltage and discharged
into the input terminals, according to ENA TS 48-4 with an
external resistor.
300Vdc
 0.5W per input at 220Vdc
8A continuously
30A, 240Vdc for 1s (L/R=5ms)
0.1A at 250Vdc (L/R=40ms)
0.2A at 125Vdc (L/R=40ms)
Typically 6 ms
8A continuously
30A, 240Vdc for 1s (L/R=5ms)
0.1A at 250Vdc (L/R=40ms)
0.2A at 125Vdc (L/R=40ms)
Typically 8 ms
≥ 10,000 operations (loaded contact)
≥ 100,000 operations (unloaded contact)
190A
39A
2A
245V
48 samples / cycle (2400Hz/50Hz or 2880Hz/60Hz system)
- 1013 -
6F2T0200 (0.15)
GRE200 (1,2)