Lbu Read From Ertec 200 With Separate Read/Write Line (Lbu_Rdy_N Active Low); Figure 13: Lbu-Read-Sequence With Separate Rd/Wr Line; Table 25: Lbu Read Access Timing With Seperate Read/Write Line - Siemens ERTEC200 Manual

7.5.1

LBU Read from ERTEC 200 with separate Read/Write line (LBU_RDY_N active low)

LBU_CS_R_N/
LBU_CS_M_N
LBU_RD_N
LBU_A(20:0)A/
LBU_SEG(1:0)/
LBU_BE(1:0)_N
LBU_RDY_N
LBU_D(15:0)

Figure 13: LBU-Read-Sequence with separate RD/WR line

Parameter
t chip select asserted to read pulse asserted delay
CSRS
t address valid to read pulse asserted setup time
ARS
t read pulse asserted to ready enabled delay
RRE
t read pulse asserted to data enable delay
RDE
t ready active pulse width
RAP
t ready asserted to data valid delay
RTD
t read pulse deasserted to chip select deasserted delay
RCSH
t address valid to read pulse deasserted hold time
RAH
t data valid/enabled to read pulse deasserted hold time
RDH
t read recovery time
RR

Table 25: LBU Read access timing with seperate Read/Write line

Copyright © Siemens AG 2007. All rights reserved.
Technical data subject to change
t
CSRS
t
ARS
t
RRE
t
RDE
Description
t
RAP
t
RTD
Min
0 ns
0 ns
5 ns
5 ns
17 ns
0 ns
0 ns
0 ns
25 ns
79
t
RCSH
t
RR
t
RAH
t
RDH
Max
12 ns
12 ns
23 ns
5 ns
12 ns
ERTEC 200 Manual
Version 1.1.0