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Compaq 6000 Supplementary Manual page 5

Highly parallel system architecture for professional workstations
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ECG066/1198
T
B
ECHNOLOGY
RIEF
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up to 16 instructions. Because multimedia operations such as video and audio use a number of
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redundant instructions, MMX achieves some efficiencies by using a technique called SIMD
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(single instruction multiple data). SIMD reduces the required number of clock cycles by
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performing redundant instructions on multiple sets of data.
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For its L2 cache, the Pentium II processor uses industry-standard SRAM (static random access
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memory). This implementation is sometimes referred to as a half-speed cache because the SRAM
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runs at half the core processor speed. Use of a half-speed L2 cache instead of a full-speed L2
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cache improves manufacturability; however, it increases cache access time, which limits
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scalability and performance. Pentium II systems will support a maximum of two processors and
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are limited to 512 MB of addressable system memory. The Pentium II processor is capable of
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caching 512 MB of system memory. Adding more memory will significantly degrade system
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performance because the additional memory will not be cached. Therefore, to ensure application
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performance, the Compaq Professional Workstation 6000 will not boot if more than 512 MB of
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system memory is installed.
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D
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U A L
E M O R Y
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The new architecture also includes two independently operating memory buses, each running at a
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peak speed of 533 MB/s. Together they provide a peak aggregate memory bandwidth of
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1.07 GB/s—two to four times the memory bandwidth of other X86/NT workstations. This high
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memory bandwidth is the key to delivering the highest performance levels of both single
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processor and SMP-aware applications.
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Each memory bus is 144 bits wide and consists of 128 bits of data plus 16 bits for Error Checking
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and Correction (ECC). The new architecture uses buffered 60-ns Extended Data Out (EDO)
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DIMMs (Dual Inline Memory Modules), and the memory is interleaved. Interleaved memory
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takes advantage of the sequential nature of program execution to overcome delays resulting from
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Column Address Strobe (CAS) precharge. CAS precharge is the time a microprocessor must wait
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between back-to-back accesses to the same Dynamic Random Access Memory (DRAM) chip
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while the DRAM chip charges back up after a destructive read.
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When interleaved memory is used, banks of DRAM are divided into two or more physically
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separate areas. Consecutive addresses are stored in different areas of a bank. This makes it
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possible for the next sequential read to begin on bank B while bank A is precharging from the
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previous read, and vice versa. Thus, interleaved memory can significantly increase memory
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throughput for sequential reads.
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EDO memory is capable of transferring data every other clock cycle (30 ns for a 60-MHz bus).
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Non-EDO (Fast Page Mode) memory, on the other hand, is capable of transferring data every four
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clocks (60 ns for a 66-MHz bus). With the combination of interleaved memory and EDO
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memory, 128 bits of data (plus 16 bits ECC) are read at a time. As Figure 2 illustrates, the first
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64 bits of the read go to the processor on one clock pulse, and the second 64 bits of data go on the
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next clock pulse. This enables the memory bus to transfer data at the peak data rate of the
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processor.
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Read 128 bits from RAM
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Figure 2. Interleaved EDO memory reads 128 data bits at a time and transfers data every other clock
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cycle.
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5
(cont.)
B
U S E S
64 bits to CPU 64 bits to CPU
Read 128 bits from RAM
Time
64 bits to CPU 64 bits to CPU

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