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Panasonic MA3S781DG Specification Sheet page 2

Schottky barrier diodes (sbd) silicon epitaxial planar type

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MA3S781DG, MA3S781EG
 V
I
F
F
3
10
75°C 25°C
2
10
= 125°C
T
a
10
1
−1
10
−2
10
0
0.4
0.8
Forward voltage V
 T
I
R
a
3
10
2
10
V
R
10
1
−1
10
−2
10
−40
0
40
80
120
Ambient temperature T
 T
I
F(AV)
50
= 125 °C
T
j
I
F
40
DC
30
20
10
0
0
40
80
120
Ambient temperature T
2
This product complies with the RoHS Directive (EU 2002/95/EC).
3
10
2
10
−20°C
10
1
−1
10
−2
10
0
1.2
( V )
F
3.0
= 30 V
10 V
2.0
1 V
1.0
0
0
160
200
( °C )
a
a
t
p
T
160
( °C )
a
 V
I
R
R
= 125°C
T
a
75°C
25°C
5
10
15
20
25
30
( V )
Reverse voltage V
R
 V
C
t
R
10
20
30
Reverse voltage V
( V )
R
SKH00203AED
 T
V
F
a
1.6
1.2
0.8
= 30 mA
I
F
0.4
3 mA
1 mA
0
−40
0
40
80
120
Ambient temperature T
a
 t
I
F(surge)
W
3
10
= 25°C
T
a
t
W
2
10
10
1
−1
10
−1
10
1
10
( ms )
Pulse width t
W
160
200
( °C )
I
F(surge)

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Ma3s781eg