Panasonic MA3S781DG Specification Sheet

Schottky Barrier Diodes (SBD)
MA3S781DG, MA3S781EG
Silicon epitaxial planar type
For high speed switching
For wave detection
■ Features
• Two MA3S7810G is contained in one package
• High-density mounting is possible
• Low forward voltage V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current Single
Double
Peak forward current Single
Double
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz. 4. * : t
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
F
= 25°C
a
Symbol Rating
V 30
R
V 30
RM
I 30
F
20
I 150
FM
110
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F1 F
V I
F2 F
I V
R
C V
t
t I
rr F
I
rr
η
V
R
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
■ Package
• Code
• Pin Name
■ Marking Symbol
Unit
V
V
mA
■ Internal Connection
mA
°C
°C
Conditions
= 1 mA
= 30 mA
= 30 V
R
= 1 V, f = 1 MHz
R
= I = 10 mA
R
= 1 mA, R = 100 Ω
L
= 3 V , f = 30 MHz
IN (peak)
= 3.9 kΩ, C = 10 pF
L L
measurement circuit
rr
Input Pulse
t t
p
r
t
10%
I
F
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00203AED
SSMini3-F3
MA3S781DG MA3S781EG
1: Cathode 1 1: Anode 1
2: Cathode 2 2: Anode 2
3: Anode 3: Cathode
MA3S781DG: M2P
MA3S781EG: M2R
3
1 2
1
D
Min Typ
1.5
1.0
65
Output Pulse
t
rr
t
= 1 mA
I
rr
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
3
2
E
Max Unit
0.4 V
1.0
µA
1
pF
ns
%
1