Switching Diodes
MA3S132AG, MA3S132KG
Silicon epitaxial planar type
For switching circuits
■ Features
• Short reverse recovery time t
• Small terminal capacitance C
• Allowing high-density mounting
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t
measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
rr
t
= 25°C
a
Symbol
Rating
V
80
R
V
80
RM
I
100
F
I
225
FM
I
500
FSM
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F
F
V
I
R
R
I
V
R
C
V
t
t
I
rr
F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
■ Package
• Code
• Pin Name
Unit
■ Marking Symbol
V
V
mA
mA
mA
■ Internal Connection
°C
°C
Conditions
= 100 mA
= 100 µA
= 75 V
R
= 0 V, f = 1 MHz
R
= 10 mA, V
= 6 V
R
= 0.1 I
= 100 Ω
, R
R
L
Input Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00082AED
SSMini3-F3
MA3S132AG
MA3S132KG
1: Cathode
1: Anode
2: N.C.
2: N.C.
3: Anode
3: Cathode
MA3S132AG: MB
MA3S132KG: MI
3
1
2
A
Min
Typ
80
Output Pulse
t
t
rr
I
F
t
= 0.1 I
I
rr
R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
3
1
2
K
Max
Unit
1.2
V
V
100
nA
2
pF
3
ns
1