Panasonic MA3SD29FG Specification Sheet

Schottky Barrier Diodes (SBD)
MA3SD29FG
Silicon epitaxial planar type
For super high speed switching circuits
 Features
 Low forward voltage V : < 0.42 V (at I
F
 Optimum for high-frequency rectification
 Short reverse recovery time t
 Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Single
Forward current (Average)
Series
Single
Peak forward current
Series
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 250 MHz
3. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
4. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
R
s
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 100 mA)
F
rr
= 25°C
a
Symbol Rating
V 30
R
V 30
RRM
100
I
F(AV)
75
200
I
FM
150
* I 1
FSM
T 125
j
T –55 to +125
stg
= 25°C±3°C
a
Symbol
V I = 10 mA
F1 F
V I = 100 mA
F2 F
I V = 10 V
R1 R
I V = 30 V
R2 R
C V = 0 V, f = 1 MHz
t R
I = I
F
t
rr
R = 100 W
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω R = 50 Ω
i
 Package
 Code
SSMini3-F3
 Pin Name
Unit
V
 Internal Connection
V
mA
mA
A
 Marking Symbol: M5R
°C
°C
Conditions
= 100 mA, I = 10 mA,
R rr
Input Pulse
t t
p
r
t
10%
90%
V
R
t = 2 µs
p
t = 0.35 ns
r
δ = 0.05
SKH00211AED
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
3
1 2
Min Typ Max
0.25 0.29
0.39 0.42
25
120
11
1
Output Pulse
t
I rr
F
t
I = 10 mA
rr
I = I = 100 mA
F R
R = 100 Ω
L
Unit
V
mA
pF
ns
1