Panasonic Schottky Barrier Diodes MA3SE020G Specification Sheet

Schottky Barrier Diodes (SBD)
MA3SE020G
Silicon epitaxial planar type
For cellular phone
■ Features
• High-frequency wave detection is possible
• Low forward voltage V
• Small terminal capacitance C
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current Single
Series
Peak forward Single
current Series
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
F
t
= 25°C
a
Symbol Rating
V 20
R
V 20
RM
I 35
F
25
I 100
FM
70
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F1 F
V I
F2 F
I V
R
C V
t
r I
f F
■ Package
• Code
• Pin Name
Unit
■ Marking Symbol: M6B
V
V
■ Internal Connection
mA
mA
°C
°C
Conditions
= 1 mA
= 35 mA
= 15 V
R
= 0 V, f = 1 MHz
R
= 5 mA
SKH00213AED
SSMini3-F3
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
3
1 2
Min Typ
9
Max Unit
0.40 V
1.0
200 nA
1.2 pF
Ω
1